STMICROELECTRONICS MJD127

MJD122
MJD127

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
ELECTRICAL SIMILAR TO TIP122 AND
TIP127
3
1
APPLICATIONS
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GENERAL PURPOSE SWITCHING AND
AMPLIFIER.
DPAK
TO-252
(Suffix ”T4”)
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R 2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbo l
Parameter
Valu e
NPN
MJD122
PNP
MJD127
Un it
V CBO
Collector-Base Voltage (IE = 0)
100
V
V CEO
Collector-Emitter Voltage (IB = 0)
100
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
IC
I CM
IB
P to t
T stg
Tj
Collector Current
5
A
Collector Peak Current
8
A
100
mA
Base Current
o
Total Dissipation at Tc ase ≤ 25 C
Storage T emperature
Max. O perating Junction Temperature
20
W
-65 to 150
o
C
150
o
C
For PNP types voltage and current values are negative.
January 1999
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MJD122 MJD127
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
6.25
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Max.
Un it
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 100 V
10
µA
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 50 V
10
µA
I CEX
Collector Cut-off
Current
V CE = 100 V V BE = -1.5V
V CE = 100 V V BE = -1.5V TC = 125 o C
10
500
µA
µA
I EBO
Emitter Cut-off
Current (I C = 0)
V EB = 5 V
2
mA
V CEO(sus)
Collector-Emitter
Sustaining Voltage
IC = 30 mA
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 4 A
IC = 8 A
I B = 16 mA
I B = 80 mA
2
4
V
V
V BE(s at)∗
Base-Emitt er
Saturation Voltage
IC = 8 A
I B = 80 mA
4.5
V
Base-Emitt er Voltage
IC = 4 A
V CE = 4 V
2.8
V
DC Current Gain
IC = 4 A
IC = 8 A
V CE = 4 V
V CE = 4 V
V BE(on) ∗
h F E∗
Parameter
Test Cond ition s
2/6
Typ .
100
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
Safe Operating Area
Min.
Derating Curve
1000
100
V
12000
MJD122 MJD127
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
Base Emitter Saturation Voltage (NPN type)
Base Emitter Saturation Voltage (PNP type)
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MJD122 MJD127
Base Emitter On Voltage (NPN type)
Base Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN type)
Freewheel Diode Forward Voltage (PNP type)
Switching Time Resistive Load (NPN type)
Switching Time resistive Load (PNP type)
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MJD122 MJD127
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL ”A”
L4
0068772-B
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MJD122 MJD127
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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