MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEO Collector-Emitter Voltage (I B = 0) 60 V V CBO Collector-Base Voltage (I E = 0) 70 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 10 A IB Base Current 6 A P tot T stg Tj Total Power Dissipation at T case ≤ 25 o C Storage Temperature Max. Operating Junction Temperature 75 W -55 to 150 o C 150 o C For PNP types voltage and current values are negative. June 1997 1/4 MJE2955T / MJE3055T THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.66 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 700 µA I CEO Collector Cut-off Current (I B = 0) V CE = 30 V I CEX Collector Cut-off Current (V BE = 1.5V) V CE = 70 V T CASE = 150 o C 1 5 mA mA I CBO Collector Cut-off Current (I E = 0) V CBO = 70 V T CASE = 150 o C 1 10 mA mA I EBO Emitter Cut-off Current (I C = 0) V EBO = 5 V 5 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 200 mA 60 V V CE(sat) ∗ Collector-Emitter Sustaining Voltage IC = 4 A I C = 10 A I B = 0.4 A I B = 3.3 A 1.1 8 V V V BE(on) ∗ Base-Emitter on Voltage IC = 4 A V CE = 4 V 1.8 V h FE DC Current Gain IC = 4 A I C = 10 A V CE = 4 V V CE = 4 V Transistor Frequency I C = 500 mA f = 500 KHz V CE = 10 V fT ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 % For PNP type voltage and current values are negative. 2/4 20 5 2 70 MHz MJE2955T / MJE3055T TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 3/4 MJE2955T / MJE3055T Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4