MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS ■ SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Base-Emitter Voltage (IC = 0) 5 V IC Collector Current 4 A IB Base Current 0.1 A P tot Total Power Dissipation at T case ≤ 25 o C 40 W T stg Storage Temperature Tj Max Operating Junction Temperature -65 to 150 o C 150 o C For PNP types voltage and current values are negative. January 1997 1/4 MJE802-MJ803 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient o 3.13 Max C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit Collector Cut-off Current (I E = 0) V CB = rated V CBO V CB = rated V CBO T case = 100 o C 100 µA 500 µA I CEO Collector Cut-off Current (I B = 0) V CE = rated V CEO 100 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA I CBO Collector-Emitter V CEO(sus) ∗ Sustaining Voltage (I B = 0) 80 I C = 50 mA V Collector-Emitter Sustaining Voltage IC = 4 A I C = 1.5 A I B = 40 mA I B = 30 mA 3 2.5 V V V BE ∗ Base-Emitter Voltage IC = 4 A I C = 1.5 A V CE = 3 V V CE = 3 V 3 2.5 V V h FE ∗ DC Current Gain IC = 4 A I C = 1.5 A V CE = 3 V V CE = 3 V 100 750 Small Signal Current Gain I C = 1.5 A f = 1 MHz V CE = 3 V 1 V CE(sat) ∗ hfe * Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5% 2/4 Min. MJE802-MJ803 SOT-32 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.04 0.106 c1 1.2 0.047 D 15.7 0.618 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 G H 3 3.2 2.54 0.118 0.126 0.100 0016114 3/4 MJE802-MJ803 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. 4/4