P6KE6V8A/440A P6KE6V8CA/440CA TRANSILTM FEATURES PEAK PULSE POWER : 600 W (10/1000µs) BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME. UL RECOGNIZED. DESCRIPTION CB417 Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Peak pulse power dissipation (see note 1) Tj initial =Tamb Power dissipation on infinite heatsink Tamb = 75°C IFSM Non repetitive surge peak forward current For Unidirectional types. Tj initial =Tamb tp =10 ms Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10s at 5mm from case PPP P Value Unit 600 W 5 W 100 A - 65 to + 175 175 °C °C 230 °C Value Unit 20 °C/W 75 °C/W Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Parameter Rth (j-l) Junction-leads Rth (j-a) Junction to ambient on printed circuit. November 1998 - Ed: 2A Llead = 10 mm 1/6 P6KExx ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol I Parameter IF VRM Stand-off voltage. VBR Breakdown voltage. VCL Clamping voltage. IRM Leakage current @ VRM. IPP Surge current. αT Voltage temperature coefficient. VF Forward Voltage drop. TYPES VCL V RM Bidirectional V I PP IRM @ VRM µA VF I RM max Unidirectional VBR VBR min V V @ IR VCL @ IPP VCL @ IPP max max 10/1000µs 8/20µs nom max note2 V V mA V A V A αT C max note3 typ note4 10-4/°C pF P6KE6V8A P6KE6.8CA 1000 5.8 6.45 6.8 7.14 10 10.5 57 13.4 298 5.7 4000 P6KE7V5A P6KE7.5CA 500 6.4 7.13 7.5 7.88 10 11.3 53 14.5 276 6.1 3700 P6KE10A P6KE10CA 10 8.55 9.5 10 10.5 1 14.5 41 18.6 215 7.5 2800 P6KE12A P6KE12CA 5 10.2 11.4 12 12.6 1 16.7 36 21.7 184 7.8 2300 P6KE15A P6KE15CA 1 12.8 14.3 15 15.8 1 21.2 28 27.2 147 8.4 1900 P6KE18A P6KE18CA 1 15.3 17.1 18 18.9 1 25.2 24 32.5 123 8.8 1600 P6KE22A P6KE22CA 1 18.8 20.9 22 23.1 1 30.6 20 39.3 102 9.2 1350 P6KE24A P6KE24CA 1 20.5 22.8 24 25.2 1 33.2 18 42.8 93 9.4 1250 P6KE27A P6KE27CA 1 23.1 28.7 27 28.4 1 37.5 16 48.3 83 9.6 1150 P6KE30A P6KE30CA 1 25.6 28.5 30 31.5 1 41.5 14.5 53.5 75 9.7 1075 P6KE33A P6KE33CA 1 28.2 31.4 33 24.7 1 45.7 13.1 59 68 9.8 1000 P6KE36A P6KE36CA 1 30.8 34.2 36 37.8 1 49.9 12 64.3 62 9.9 950 P6KE39A P6KE39CA 1 33.3 37.1 39 41.0 1 53.9 11.1 69.7 57 10.0 900 P6KE47A P6KE47CA 1 40.2 44.7 47 49.4 1 64.8 9.3 84 48 10.1 800 P6KE56A P6KE56CA 1 47.8 53.2 56 58.8 1 77 7.8 100 40 10.3 700 P6KE68A P6KE68CA 1 58.1 64.6 68 71.4 1 92 6.5 121 33 10.4 625 P6KE82A P6KE82CA 1 70.1 77.9 82 86.1 1 113 5.3 146 27 10.5 550 P6KE100A P6KE100CA 1 85.5 95.0 100 105 1 137 4.4 178 22.5 10.6 500 P6KE120A P6KE120CA 1 102 114 120 126 1 165 3.6 212 19 10.7 450 P6KE150A P6KE150CA 1 128 143 150 158 1 207 2.9 265 15 10.8 400 P6KE180A P6KE180CA 1 154 171 180 189 1 246 2.4 317 12.6 10.8 360 P6KE200A P6KE200CA 1 171 190 200 210 1 274 2.2 353 11.3 10.8 350 2/6 P6KExx TYPES Unidirectional IRM @ VRM max Bidirectional min VBR @ IR nom max note2 VCL @ IPP max 10/1000µs VCL @ IPP max 8/20µs αT max note3 C typ note4 pF µA V V V V mA V A V A 10-4/°C P6KE220A P6KE220CA 1 188 209 220 231 1 328 2 388 10.3 10.8 330 P6KE250A P6KE250CA 1 213 237 250 263 1 344 2 442 9 11 310 P6KE300A P6KE300CA 1 256 285 300 315 1 414 1.6 529 7.6 11 290 P6KE350A P6KE350CA 1 299 332 350 368 1 482 1.6 618 6.5 11 270 P6KE400A P6KE400CA 1 342 380 400 420 1 548 1.3 706 5.7 11 360 P6KE440A P6KE440CA 1 376 418 440 462 1 603 1.3 776 5.2 11 350 Fig 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board). % IPP 100 10 s PULSE WAVEFORM 10/1000 s 50 0 t 1000 s Note 2 : Note 3 : Note 4 Pulse test : tp < 50 ms. ∆VBR = αT * (Ta - 25) * V BR(25°C). VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2. 3/6 P6KExx Fig. 2 : Peak pulse power versus exponential pulse duration. Ppp (W) 0.001 0.01 0 .1 1 10 100 Fig. 3 : Clamping voltage versus peak pulse current. exponential waveform : t p = 20 µs________ t p = 1 ms------------t p =10 ms ............... Note : The curves of the figure 3 are specified for a junction temperature of 25 °C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : ∆V (BR) = αT (V(BR)) * [Ta -25] * V (BR). For intermediate voltages, extrapolate the given results. 4/6 P6KExx Fig. 4a : Capacitance versus reverse applied voltage for unidirectional types (typical values). Fig. 4b : Capacitance versus reverse applied voltage for bidirectional types (typical values). Fig. 5 : Peak forward voltage drop versus peak forward current (typical values for unidirectional types). Fig. 6 : Transient thermal impedance junction-ambient versus pulse duration (For FR4 PC Board with L lead = 10mm). Note : multiply by 2 for units with VBR > 220 V. Fig. 7 : Relative variation of leakage current versus junction temperature. 5/6 P6KExx ORDER CODE P6 KE 100 C A RL PACKAGING: = Ammopack tape RL = Tape and reel. 600 W BREAKDOWN VOLTAGE BIDIRECTIONAL MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). PACKAGE MECHANICAL DATA CB417 (Plastic) DIMENSIONS REF. C O /D A C Millimetres Min. / B O Min. Max. A 8.89 0.350 B 3.683 0.145 C O /D Max. Inches D 25.4 1.000 1.092 0.043 Packaging : standard packaging is in tape and reel. Weight = 0.65 g. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 6/6