VISHAY CNY64

CNY64/ CNY65/ CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output, Very High Isolation
Voltage
Features
• Rated isolation voltage (RMS includes DC)
VIOWM = 1000 VRMS (1450 V peak)
• Rated recurring peak voltage (repetitive)
VIORM = 1000 VRMS
• Thickness through insulation ≥ 3 mm
• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index:
CTI ≥ 200
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
64
Top View
A
• VDE related features:
• Rated impulse voltage (transient overvoltage)
VIOTM = 8 kV peak
• Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
For appl. class I - IV at mains voltage ≤ 300 V
For appl. class I - IV at mains voltage ≤ 600 V
For appl. class I - III at mains voltage ≤ 1000 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for:
Switch-mode power supplies, line receiver, computer
peripheral interface, microprocessor system interface.
C
66
V
D E
C
Agency Approvals
• UL1577, File No. E76222 System Code H,J &K,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
65
E
e4
17187
Pb
Pb-free
Order Information
Part
Remarks
CNY64
CTR 50 - 300 %, High Isolation Distance, 4 PIN
CNY65
CTR 50 - 300 %, High Isolation Distance, 4 PIN
CNY66
CTR 50 - 300 %, High Isolation Distance, 4 PIN
CNY64A
CTR 63 - 125 %, High Isolation Distance, 4 PIN
CNY65A
CTR 63 - 125 %, High Isolation Distance, 4 PIN
CNY64B
CTR 100 - 200 %, High Isolation Distance, 4 PIN
CNY65B
CTR 100 - 200 %, High Isolation Distance, 4 PIN
Description
The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-pin plastic package.
The single components are mounted opposite one
another, providing a distance between input and output for highest safety requirements of > 3 mm.
VDE Standards
These couplers perform safety functions according to the following
equipment standards:
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending
Optocoupler for electrical safety requirements
IEC 60950/EN 60950
Document Number 83540
Rev. 1.6, 26-Oct-04
www.vishay.com
1
CNY64/ CNY65/ CNY66
VISHAY
Vishay Semiconductors
Office machines (applied for reinforced isolation for mains voltage
≤ 400 VRMS)
VDE 0804
VDE 0700/IEC 60335
Household equipment
VDE 0160
Telecommunication apparatus and data processing
Electronic equipment for electrical power installation
IEC 60065
VDE 0750/IEC 60601
Safety for mains-operated electronic and related household appa-
Medical equipment
ratus
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
5
V
Forward current
IF
75
mA
IFSM
1.5
A
Pdiss
120
mW
Tj
100
°C
Forward surge current
Test condition
tp ≤ 10 µs
Power dissipation
Junction temperature
Unit
Output
Symbol
Value
Unit
Collector emitter voltage
Parameter
Test condition
VCEO
32
V
Emitter collector voltage
VECO
7
V
IC
50
mA
ICM
100
mA
Pdiss
130
mW
Tj
100
°C
Symbol
Value
Unit
VISO
8.2
kV
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
- 55 to + 85
°C
Tstg
- 55 to + 100
°C
Tsld
260
°C
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
Power dissipation
Junction temperature
Coupler
Parameter
AC isolation test voltage (RMS)
Test condition
t = 1 min
Storage temperature range
Soldering temperature
www.vishay.com
2
2 mm from case, t ≤ 10 s
Document Number 83540
Rev. 1.6, 26-Oct-04
CNY64/ CNY65/ CNY66
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 50 mA
Test condition
Symbol
VF
Min
1.25
1.6
Junction capacitance
VR = 0, f = 1 MHz
Cj
50
Unit
V
pF
Output
Symbol
Min
Collector emitter voltage
Parameter
IC = 1 mA
Test condition
VCEO
32
Typ.
Max
Unit
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
Collector-emitter leakage
current
VCE = 20 V, If = 0
ICEO
200
nA
Max
Unit
0.3
V
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Collector emitter saturation
voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF
Current Transfer Ratio
Parameter
IC/IF
Test condition
Part
Symbol
Min
CTR
50
300
%
CNY64A
CTR
63
125
%
CNY65A
CTR
63
125
%
CNY64B
CTR
100
200
%
CNY65B
CTR
100
200
%
VCE = 5 V, IF = 10 mA
Typ.
Max
Unit
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Parameter
Test condition
Forward current
Symbol
Min
Typ.
IF
Max
Unit
120
mA
Max
Unit
250
mW
Output
Parameter
Power dissipation
Document Number 83540
Rev. 1.6, 26-Oct-04
Test condition
Symbol
Pdiss
Min
Typ.
www.vishay.com
3
CNY64/ CNY65/ CNY66
VISHAY
Vishay Semiconductors
Coupler
Parameter
Test condition
Rated impulse voltage
Safety temperature
Symbol
Max
Unit
VIOTM
Min
Typ.
8
kV
Tsi
150
°C
Max
Unit
Insulation Rated Parameters
Parameter
Test condition
Symbol
Min
Vpd
2.8
kV
VIOTM
8
kV
Vpd
2.2
kV
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
11
Ω
VIO = 500 V, Tamb = 150 °C
RIO
9
Ω
Partial discharge test voltage Routine test
100 %, ttest = 1 s
Partial discharge test voltage Lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Insulation resistance
10
10
Typ.
(construction test only)
VIOTM
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
250
225
Psi (mW)
200
175
VPd
150
VIOWM
VIORM
125
100
75
I si (mA)
50
0
t3 ttest t4
25
0
0
25
95 10922
50
75
100 125 150 175 200
4
tTr = 60 s
t2
tstres
t
Tamb ( °C )
Figure 1. Derating diagram
www.vishay.com
13930
t1
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
Document Number 83540
Rev. 1.6, 26-Oct-04
CNY64/ CNY65/ CNY66
VISHAY
Vishay Semiconductors
Switching Characteristics
Test condition
Symbol
Delay time
Parameter
VS = 5 V, IC = 5 mA, RL = 100 Ω
(see figure 3)
td
Min
Typ.
2.6
Max
µs
Rise time
VS = 5 V, IC = 5 mA, RL = 100 Ω
(see figure 3)
tr
2.4
µs
Fall time
VS = 5 V, IC = 5 mA, RL = 100 Ω
(see figure 3)
tf
2.7
µs
Storage time
VS = 5 V, IC = 5 mA, RL = 100 Ω
(see figure 3)
ts
0.3
µs
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω
(see figure 3)
ton
5.0
µs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω
(see figure 3)
toff
3.0
µs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ
(see figure 4)
ton
25.0
µs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ
(see figure 4)
toff
42.5
µs
IF
0
+5V
IF
IF
IC = 5 mA; adjusted through
input amplitude
RG = 50 W
tp
= 0.01
T
tp = 50 Ps
Channel I
Channel II
50 W
100 W
Oscilloscope
RL t 1 MW
CL d 20 pF
Figure 3. Test circuit, non-saturated operation
0
IF
IF = 10 mA
96 11698
0
IC
tp
t
100%
90%
10%
0
tp
td
tr
ton (= td + tr)
95 10900
Unit
tr
td
ton
ts
pulse duration
delay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
t
tf
toff
storage time
fall time
turn-off time
Figure 5. Switching Times
+5V
IC
RG = 50 Ω
tp
= 0.01
T
tp = 50 µs
Channel I
Channel II
50 Ω
1 kΩ
Oscilloscope
RL≥ 1M Ω
CL ≤ 20 pF
95 10843
Figure 4. Test circuit, saturated operation
Document Number 83540
Rev. 1.6, 26-Oct-04
www.vishay.com
5
CNY64/ CNY65/ CNY66
VISHAY
Vishay Semiconductors
200
1000
160
ICEO– Collector Dark Current,
with open Base ( nA)
Ptot –Total Power Dissipation ( mW )
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
Coupled Device
80
Phototransistor
IR-Diode
40
V CE=20V
I F=0
100
10
0
1
0
25
50
75
100
Tamb – Ambient Temperature (°C )
95 11003
Figure 6. Total Power Dissipation vs. Ambient Temperature
0
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature (°C )
96 12000
Figure 9. Collector Dark Current vs. Ambient Temperature
100
IC – Collector Current ( mA)
I F - Forward Current ( mA )
1000
100
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F - Forward Voltage ( V )
10
1
0.1
0.01
0.1
0.1
96 11862
V CE=5V
100
10
I F – Forward Current ( mA )
95 11012
Figure 7. Forward Current vs. Forward Voltage
1
Figure 10. Collector Current vs. Forward Current
1.4
1.3
V CE=5V
I F=10mA
1.2
1.1
1.0
0.9
0.8
0.7
I F=50mA
10mA
10
5mA
2mA
1
1mA
0.6
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
96 11911
Tamb – Ambient Temperature ( °C )
Figure 8. Relative Current Transfer Ratio vs. Ambient
Temperature
www.vishay.com
6
IC – Collector Current ( mA )
CTR rel– Relative Current Transfer Ratio
100
1.5
0.1
0.1
95 11013
1
100
10
V CE – Collector Emitter Voltage ( V )
Figure 11. Collector Current vs. Collector Emitter Voltage
Document Number 83540
Rev. 1.6, 26-Oct-04
CNY64/ CNY65/ CNY66
VISHAY
ton / toff - Turn on / Turn off Time ( µ s )
VCEsat– Collector Emitter Saturation Voltage (V)
Vishay Semiconductors
1.0
0.9
0.8
0.7
CTR=50%
0.6
0.5
0.4
0.3
0.2
20%
0.1
10%
0.0
1
10
I C – Collector Current ( mA )
96 11912
Non Saturated
Operation
VS = 5 V
R L = 100 Ω
ton
15
toff
10
5
0
0
100
95 11016
Figure 12. Collector Emitter Saturation Voltage vs. Collector
Current
CTR – CurrentTransfer Ratio ( % )
20
2
4
6
8
10
I C - Collector Current ( mA )
Figure 15. Turn on / off Time vs. Collector Current
1000
V CE=5V
100
10
1
0.1
1
100
10
I F – Forward Current ( mA )
95 11015
ton / toff - Turn on / Turn off Time ( µ s )
Figure 13. Current Transfer Ratio vs. Forward Current
50
toff
40
30
ton
20
Saturated Operation
VS = 5 V
RL = 1 kΩ
10
0
0
95 11017
5
10
15
20
I F - Forward Current ( mA )
Figure 14. Turn on / off Time vs. Forward Current
Document Number 83540
Rev. 1.6, 26-Oct-04
www.vishay.com
7
CNY64/ CNY65/ CNY66
VISHAY
Vishay Semiconductors
Package Dimensions in mm
14765
Package Dimensions in mm
14763
www.vishay.com
8
Document Number 83540
Rev. 1.6, 26-Oct-04
VISHAY
CNY64/ CNY65/ CNY66
Vishay Semiconductors
Package Dimensions in mm
14764
Document Number 83540
Rev. 1.6, 26-Oct-04
www.vishay.com
9
CNY64/ CNY65/ CNY66
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
10
Document Number 83540
Rev. 1.6, 26-Oct-04