New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm Profile • Typical ESD Protection 2800 V • Rated ESD Protection 1400 V • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 1.1 nC APPLICATIONS • Load Switch for Portable Devices • Low Voltage Load Switch PowerPAK SC75-6L-Dual D2 D1 1 S1 2 G1 D1 6 4 S2 G2 G1 CCX Part # code D2 G2 5 1.60 mm 200 Ω 200 Ω Marking Code 3 D2 D1 XXX 1.60 mm Lot Traceability and Date code S2 S1 Ordering Information: SiB900EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Limit Drain-Source Voltage Gate-Source Voltage VGS ±6 TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Document Number: 64808 S09-0667-Rev. A, 20-Apr-09 Unit V 1.5a TC = 25 °C Continuous Drain Current (TJ = 150 °C) 20 TJ, Tstg 1.5a 1.5a, b, c 1.3b, c 4 A 1.5a 0.9b, c 3.1 2 1.1b, c 0.7b, c - 55 to 150 260 W °C www.vishay.com 1 New Product SiB900EDK Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC t≤5s Steady State Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Typical 90 32 Maximum 115 40 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 125 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Rg tr mV/°C - 2.3 1.0 V VDS = 0 V, VGS = ± 3 V ±1 µA VDS = 0 V, VGS = ± 6 V ±1 mA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.6 A 0.4 4 µA A 0.183 0.225 VGS = 2.5 V, ID = 1.5 A 0.220 0.270 VGS = 1.8 V, ID = 1.3 A 0.275 0.345 VGS = 1.5 V, ID = 0.3 A 0.320 0.960 VDS = 10 V, ID = 1.6 A 3.5 VDS = 10 V, VGS = 4.5 V, ID = 1.7 A 0.2 1.1 Ω S 1.7 nC 0.1 f = 1 MHz td(on) td(off) V 21 20 VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω tf Ω 200 30 12 20 70 105 20 30 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 1.5 4 IS = 1.3 A, VGS = 0 V 0.9 1.2 A V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64808 S09-0667-Rev. A, 20-Apr-09 New Product SiB900EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 35 10-1 10-2 10-3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 30 25 20 15 10 10-4 10-5 TJ = 25 °C TJ = 150 °C 10-6 10-7 10-8 5 10-9 0 10-10 0 2 4 6 8 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 4.0 2.0 3.5 VGS = 5 thru 2 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 3.0 2.5 2.0 VGS = 1.5 V 1.5 1.2 0.8 TC = 25 °C 1.0 0.4 TC = 125 °C 0.5 VGS = 1 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0.0 0.0 3.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 0.50 ID = 1.7 A VGS = 1.5 V VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 0.45 VGS = 1.8 V 0.40 0.35 0.30 VGS = 2.5 V 0.25 4 VDS = 10 V VDS = 16 V 2 0.20 VGS = 4.5 V 0.15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.3 0.6 0.9 1.2 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge Document Number: 64808 S09-0667-Rev. A, 20-Apr-09 1.5 www.vishay.com 3 New Product SiB900EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 1.7 1.6 I S - Source Current (A) VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.6 A 1.4 (Normalized) R DS(on) - On-Resistance 1.5 1.3 1.2 1.1 VGS = 1.5 V; ID = 0.4 A 1.0 1 TJ = 25 °C TJ = 150 °C 0.1 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0.01 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Normalized On-Resistance vs. Junction Temperature 8 1.0 6 Power (W) R DS(on) - On-Resistance (Ω) ID = 1.6 A 0.8 0.6 0.4 4 TJ = 125 °C 2 0.2 TJ = 25 °C 0.0 0 1 2 3 4 0 0.001 5 0.01 0.1 1 10 100 1000 Time (s) VGS - Gate-to-Source Voltage (V) Single Pulse Power, Junction-to-Ambient On-Resistance vs. Gate-to-Source Voltage 0.9 10 Limited by RDS(on)* I D - Drain Current (A) VGS(th) (V) 0.8 0.7 ID = 250 µA 0.6 100 µs 1 1 ms 10 ms 0.1 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse 0.5 BVDSS Limited 0.4 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage 100 125 150 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 64808 S09-0667-Rev. A, 20-Apr-09 New Product SiB900EDK Vishay Siliconix 4 4 3 3 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2 Package Limited 2 1 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64808 S09-0667-Rev. A, 20-Apr-09 www.vishay.com 5 New Product SiB900EDK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 125 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64808. www.vishay.com 6 Document Number: 64808 S09-0667-Rev. A, 20-Apr-09 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Dual 2.2 (0.087) 1.25 (0.049) 0.25 (0.01) 1.6 (0.063) (0.024) 0.61 2.2 (0.087) (0,0) 0.32 (0.013) 0.44 (0.017) 0.25 (0.01) 0.375 (0.015) 1 0.5 (0.02) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70489 Revision: 28-Oct-08 www.vishay.com 15 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1