S16xxxH SCR FEATURES IT(RMS) = 16A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S16xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc= 90°C 16 A IT(AV) Average on-state current (180° conduction angle) Tc= 90°C 10 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C ) tp = 8.3 ms 175 A tp = 10 ms 160 I2t Value for fusing tp = 10 ms 128 A2s 100 A/µs - 40, + 150 - 40, + 125 °C 260 °C I2t dI/dt Critical rate of rise of on-state current IG = 100 mA diG /dt = 1 A/µs. Tstg Tj Storage and operating junction temperature range Tl Symbol VDRM VRRM Januaryr 1995 Maximum lead temperature for soldering during 10s at 4.5mm from case Voltage Parameter Repetitive peak off-state voltage Tj = 125°C Unit B D M N 200 400 600 800 V 1/5 S16xxxH THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 60 °C/W Rth(j-c) Junction to case for DC 2.2 °C/W Sensitivity Unit GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33Ω Tj= 25°C 10 16 MIN 10 20 MAX 25 50 mA VGT VD=12V (DC) RL=33Ω Tj= 25°C MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj= 125°C MIN 0.2 V tgt VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.8A/µs IG = 90mA Tj= 25°C TYP 2 µs IH IT= 250mA Gate open Tj= 25°C MAX 50 100 mA IL IG=1.2 IGT Tj= 25°C MAX 100 200 mA VTM ITM= 32A tp= 380µs Tj= 25°C MAX 1.6 V IDRM IRRM VD = VDRM VR = VRRM Tj= 25°C MAX 10 µA Tj= 110°C MAX 2 mA dV/dt VD=67%VDRM Gate open Tj= 110°C MIN tq ITM= 3 x IT(AV) VR =35V dI/dt=25A/µs tp=100µs dV/dt=25V/µs VD= 67%VDRM Tj= 110°C MAX 400 500 100 V/µs µs ORDERING INFORMATION S 16 16 M H PACKAGE : H = TO220 Non-insulated SCR MESA GLASS CURRENT SENSITIVITY 2/5 VOLTAGE S16xxxH Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tcase (o C) P (W) 16 16 360 14 Rth = 0 o C/W o 1 C/W 2 o C/W 4 o C/W O 14 DC 12 12 = 1 80 10 8 = 120 = 90 6 = 60 4 o 8 = 180 o 2 4 6 -105 o 6 o 8 -115 4 2 I T(AV)(A) 0 0 -95 10 o = 30 o 2 -85 10 12 o Tamb ( C) 14 16 Fig.3 : Average on-state current versus case temperature. 0 0 20 40 60 80 100 -125 140 120 Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth I T(AV) (A) 1 20 18 DC 16 Zt h( j-c) 14 12 0.1 10 Zt h( j-a) o = 180 8 6 4 2 0 o tp (s) Tcase ( C) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 200 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 1E-3 o Tj initial = 25 C 150 Igt 100 Ih 50 Number of cycles Tj(oC) -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 100 0 3/5 S16xxxH Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). I TSM (A). I2 t (A 2 s) I TM (A) 200 1000 Tj initial = 25oC Tj initial o 25 C 100 I TSM Tj max 10 Tj max Vto =0.90 V Rt =0.020 I2 t 100 1 VTM (V) tp(ms) 10 4/5 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 S16xxxH PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) REF. DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A A H B J G I L D P N1 M N 6.5 0.406 0.248 0.256 9.1 0.358 12.7 F G C F 6.3 C D B O 10.3 0.500 4.2 3.0 0.165 0.118 H I 4.5 3.53 4.7 3.66 0.177 0.185 0.139 0.144 J 1.2 1.3 0.047 0.051 0.9 0.035 L M 2.7 0.106 N N1 O P 5.3 2.54 0.209 0.100 1.2 1.4 1.15 0.047 0.055 0.045 Marking : type number Weight : 1.8 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5