S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N). APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1500 V Collector-Emitter Voltage (I B = 0) 700 V Emitter-Base Voltage (I C = 0) 10 V Collector Current 8 A 15 A V CES Collector-Emitter Voltage (V BE = 0) V CEO V EBO IC I CM Collector Peak Current (tp < 5 ms) o P t ot Total Dissipation at T c = 25 C T stg St orage Temperature Tj Max. Operating Junction Temperature December 1999 50 W -65 to 150 o C 150 o C 1/6 S2000AFI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ . o T C = 125 C Max. Un it 1 2 mA mA 100 µA I C = 100 mA 700 V Emitter Base Voltage (I C = 0) I E = 10 mA 10 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 4.5 A IB = 2 A 1 V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 4.5 A IB = 2 A 1.3 V ts tf INDUCTIVE LOAD Storage Time Fall T ime I C = 4.5 A hFE = 2.5 VCC = 140 V L C = 0.9 mH L B = 3 µH fT Transition F requency I C = 0.1 A V EBO VCE = 5 V f = 5 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area. 2/6 Thermal Impedance 7 0.55 µs µs 7 MHz S2000AFI DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load Switching Time Inductive Load (see figure 1) 3/6 S2000AFI Figure 1: Inductive Load Switching Test Circuit. 4/6 S2000AFI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 3.7 0.138 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/A 5/6 S2000AFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 6/6