SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .. .. .. 30 MHz 12.5 VOLTS COMMON EMITTER IMD −32 dB GOLD METALLIZATION P OUT = 75 W MIN. WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1405 BRANDING SD1405 PIN CONNECTION DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes diffused emitter resistors to achieve infinte VSWR under rated operating conditions. 1. Collector 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4.0 V Device Current 20 A Power Dissipation 270 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 0.65 °C/W IC PDISS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance July 1993 1/4 SD1405 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 50 mA IE = 0 mA 36 — — V BVCES IC = 100 mA VBE = 0 V 36 — — V BVCEO IC = 100 mA IB = 0 mA 18 — — V BVEBO IE = 10 mA IC = 0 mA 4.0 — — V ICES VCE = 15 V IE = 0 mA — — 15 mA hFE VCE = 5 V IC = 5 A 20 — 300 — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT f = 30 MHz PIN = 3.8 W VCE = 12.5 V 75 — — W GP f = 30 MHz PIN = 3.8 W VCE = 12.5 V 13 — — dB IMD* f = 30 MHz VCE = 12.5 V ICQ = 100 mA −32 — — dB COB f = 1 MHz VCB = 12 V — 350 — pF Note: *P OUT = 60WP EP, fO = 30 + 30.001 MHz TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/4 POWER OUTPUT vs POWER INPUT TWO TONE TEST SD1405 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN Z IN (Ω) 0.7 + j 0.75 FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE Z CL 30 MHz ZCL (Ω) 1.2 + j 1.0 TEST CIRCUIT C1 C2,C4 C3,C5 C6 C7,C8 C9,C10 C11 C12 : : : : : : : : 9 - 180 pF, Arco 463 5 - 380pF, Arco 465 200pF, Unelco 110 - 580pF, Arco 467 0.1µF Ceramic Disk 1000pF, Unelco 10µF, Electrolytic, 35Vdc 1000µF, Electrolytic, 50Vdc L1,L3 L2 : 2 1/2 Turns, #14 AWG, 1/4” I.D. Loose Wound : 16 Turns, #16 AWG, Enameled Wire On Micrometals Torroid #T-94 L4 : 3 1/2 Turns, #16 AWG, Enameled Wire, 1/4” I.D. L5 : 14 Turns, #16 AWG, Enameled Wire, 1/4” I.D. R1,R2,R3 : 1.5 Ohm, 1 Watt Carbon 3/4 SD1405 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0174 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4