SD1424 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS .. .. .. . 800 - 900 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION P OUT = 30 W MIN. WITH 7.5 dB GAIN .250 x .320 4LFL (M156) epoxy sealed ORDER CODE SD1424 BRANDING SD1424 PIN CONNECTION DESCRIPTION The SD1424 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 48 V VCES Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4.0 V 4 A Power Dissipation 87.5 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 2.0 °C/W IC PDISS Device Current THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 7, 1993 rev. 1 1/5 SD1424 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 50mA IE = 0mA 48 50 — V BVCEO IC = 20mA IB = 0mA 25 30 — V BVEBO IE = 5mA IC = 0mA 3.5 4.0 — V I CBO VCB = 24V IE = 0mA — — 1.0 mA hFE VCE = 10V IC = 100mA 20 — 100 — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT f = 960 MHz PIN = 5.3 W VCC = 24 V 30 — — W GP ηc f = 960 MHz POUT = 30 W VCC = 24 V 7.5 — — dB f = 960 MHz POUT = 30 W VCC = 24 V 45 50 — % COB f = 1 MHz VCB = 24 V (each side) — 20 24 pF Note: I CQ = 150mA TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/5 rev. 1 SD1424 TEST CIRCUIT LAYOUT rev. 1 3/5 SD1424 TEST CIRCUIT C1, C2, C3 : C4, C5, C6, C7 : C8 : C9 : C10 : C11 : C12 : 4/5 rev. 1 D1, D2 : SD1423 Devices 0.8 - 8pF Variable Capacitors 62pF 22µF 180pF 47µF, 63V 180pF 10µF, 63V L1, L2 L3 L4 L5 : : : : #22 AWG with Ferrite Core 4 Turns, #22 AWG 2 Turns, #22 AWG 5 Turns, #22 AWG T1, T2 : λ /4 Transformers Material: Epsilam 10, Er = 10.5, Height = .050” SD1424 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0156 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A rev. 1 5/5