SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .. .. .. . . . 170 - 230 MHz 25 VOLTS IMD − 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 20 W MIN. WITH 8.0 dB GAIN .500 4L STUD (M130) epoxy sealed ORDER CODE SD1455 BRANDING SD1455 PIN CONNECTION DESCRIPTION The SD1455 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and Band III television transmitters and transposers. 1. Collector 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 35 V VCES Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4.0 V Device Current 8.0 A Power Dissipation 140 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 1.5 °C/W IC PDISS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance July 1993 1/4 SD1455 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 50 mA IE = 0 mA 65 — — V BVCER IC = 50 mA RBE = 10 Ω 60 — — V BVCEO IC = 50 mA IB = 0 mA 35 — — V BVEBO IE = 10 mA IC = 0 mA 4.0 — — V ICES VCE = 50 V VBE = 0 V — — 5 mA hFE VCE = 5 V IC = 1 A 20 — 120 — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT f = 225 MHz VCE = 25 V IC = 2.5 A 20 — — W GP f = 225 MHz VCE = 25 V IC = 2.5 A 8.0 9.0 — dB IMD3* POUT = 14 W VCE = 25 V IC = 2.5 A — −55 — dBc f = 1 MHz VCB = 30 V — — 85 pF COB Note: * f = 225 MHz 3 Tone Testing −8dB/ ref − 7dB/ ref Carrier − 16dB/ref Visi on Carrier Sound Carrier Sideband TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/4 INTERMODULATION DISTORTION vs POWER OUTPUT SD1455 TYPICAL PERFORMANCE (CONT’D) THERMAL RESISTANCE vs CASE TEMPERATURE SAFE OPERAITNG AREA IMPEDANCE DATA 150 MHz Z IN (Ω) 1.0 + j 1.0 ZCL (Ω) 9.0 + j 5.0 250 MHz 1.0 + j 2.0 6.0 + j 6.0 FREQ. Z CL ZIN VCE = 28 V IC = 2.5 A Normalized to 50 Ohms 3/4 SD1455 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0130 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4