SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS .. .. .. .. . 170 - 230 MHz 28 VOLTS IMD −55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 14 W MIN. WITH 14.0 dB GAIN .500 6LFL (M111) epoxy sealed ORDER CODE SD1458 BRANDING SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and band III television transmitters and transposers. 1. Collector 2. Base 3. Emitter 4. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V Device Current 10 A Power Dissipation 140 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 1.5 °C/W IC PDISS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 1/5 SD1458 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCER IC = 50mA RBE = 10Ω 60 — — V BVCEO IC = 50mA IB = 0mA 35 — — V BVEBO IE = 10mA IC = 0mA 4.0 — — V ICES VCE = 50V IE = 0mA — — 5 mA hFE VCE = 5V IC = 1A 10 — 100 — DYNAMIC Symbol Min. Typ. Max. Unit POUT f = 225 MHz VCE = 28 V IC = 2.5 A 14 — — W GP f = 225 MHz VCE = 28 V IC = 2.5 A 14 — — dB IMD3 f = 225 MHz VCE = 28 V IC = 2.5 A — — −55 dBc COB f = 1 MHz VCB = 28 V — — 80 pF Note: 2/5 Value Test Conditions IMD 3 - Vi sion Carrier - 8dB - Sound Carri er - 7dB - Si deband Carri er - 16dB SD1458 TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT IMD vs POWER OUTPUT THERMAL RESISTANCE vs CASE TEMPERATURE 3/5 SD1458 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0111 4/5 SD1458 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5