SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS .. .. . .. . .. 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION P OUT = 100 W MIN. WITH 7.0 dB GAIN 2 x .437 x .450 2LFL (M175) epoxy sealed ORDER CODE SD1680 BRANDING SD1680 PIN CONNECTION DESCRIPTION The SD1680 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3.0 V Device Current 25 A Power Dissipation 310 W TJ Junction Temperature +200 °C T STG Storage Temperature − 55 to +150 °C 0.55 °C/W IC PDISS THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1/7 SD1680 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 100mA IE = 0mA 60 — — V BVCEO IC = 100mA IB = 0mA 30 — — V BVEBO IE = 50mA IC = 0mA 3.0 — — V ICES VCE = 28V IE = 0mA — — 10 mA hFE VCE = 5V IC = 3A 15 — 70 — Tested Per Side DYNAMIC Symbol Value Test Conditions Min. Typ. Max. POUT * f = 900 MHz VCE = 24 V ICQ = 2 x 300 mA 120 — — W G P* f = 900 MHz VCE = 24 V ICQ = 2 x 300 mA 7.0 — — dB IMD** ηc f = 900 MHz VCE = 24 V ICQ = 2 x 300 mA — −32 — dBc f = 900 MHz VCE = 24 V ICQ = 2 x 300 mA 45 — — % f = 1 MHz VCB = 28 V — — 100 pF COB Note: * @ 1 dB Compressi on ** P OU T = 100W PEP, ∆F= 400KHz (2 tones) TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/7 Unit THERMAL RESISTANCE vs CASE TEMPERATURE SD1680 TYPICAL PERFORMANCE (cont’d) COLLECTOR EFFICIENCY vs FREQUENCY BROADBAND POWER GAIN vs FREQUENCY INTERMODULATION DISTORTION vs POWER OUTPUT 3/7 SD1680 IMPEDANCE DATA 4/7 FREQ. ZIN (Ω)* ZCL (Ω)** 910 MHz 4.8 + j 0.95 5.0 + j 0.9 930 MHz 4.5 + j 0.0 4.6 + j 1.7 950 MHz 4.3 − j 1.0 4.2 + j 2.6 970 MHz 4.1 − j 1.9 * Base to Base ** Collector to Collector POUT = 100W VCC = 24V Normalized to 50 Ohms 3.8 + j 3.4 SD1680 TEST CIRCUIT B1, B2 : Coaxial Cable 25, 43mm C1, C2 : 330pF, ATC 100B C3 : .8 - 8.0pF Johanson Gigatrim C4 : 2 x 3.6pF + 1.6pF ATC 100B C5 : 3.3pF ATC 100B + .8 - 8.0pF Johanson Gigatrim C6, C7 : 330pF, ATC 100B C8 : 120pF ATC 100B C9 : 1.5nF, ATC 100B C10 : 10nF + 47µF, 63V C11 : 1.5nF, ATC 100B + 10nF C12 : 470pF + 1.5nF, ATC 100B + 100mF, 63V C13 : .4 - 4pF Johanson Gigatrim Substrate: Teflon Glass, Er = 2.55, 30Mils Thick L1, L18 L2, L17 L3, L16 L4, L15 L5 L6 L7 L8 L9, L10 L11 L12 L13 L14 L19 L20 L21, L22 : : : : : : : : : : : : : : : : Printed Line 50Ω Printed Line 26.7Ω 10mm Printed Line 60Ω 10.5mm Printed Line 50Ω 43mm Printed Line 25Ω 13.5mm Printed Line 21Ω 15mm Printed Line 10.5Ω 12.5mm Printed Line 8Ω 7.5mm Printed Line 50Ω 10mm Printed Line 9.5Ω 10.5mm Printed Line 11Ω 14.5mm Printed Line 15.5Ω 8.5mm Printed Line 19Ω 3.5mm 2 Turns, #16 AWG 2 Turns, #16 AWG 12 Turns, #22 AWG 5/7 SD1680 BIAS VOLTAGE SOURCE 10nF + 100nF + 10µF 10nF 1µF 1.2nF + 27nF + 10µF C15 C16 C17 C18 : : : : D1 D2 D3 : AAY 49, Ge Diode Thermally Connected with Q3 Heatsink : 1N 4005, SI Diode Thermally Connected with Q3 Heatsink : 1N 4005, SI Diode Thermally Connected with RF Transistors Flange L8, L9 : Ferrite Choke 6/7 Q3 : BDX 63B R7 R8 : 470Ω, 1/2W : 100Ω, Trimpot SD1680 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0175 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7