SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS .. .. .. . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS P OUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL (M151) hermetically sealed ORDER CODE SD1893-03 BRANDING 1893-3 PIN CONNECTION DESCRIPTION The SD1893-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. The device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. 1. Collector 2. Emitter 3. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.5 V Device Current 4.4 A Power Dissipation 43 W IC PDISS TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +200 °C 5.5 °C/W THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1/5 SD1893-03 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 3mA IE = 0mA 45 — — V BVEBO IE = 3mA IC = 0mA 3.5 — — V I CBO VCB = 28V IE = 0mA — — 5 mA hFE VCE = 5V IC = 300mA 15 — 150 — DYNAMIC Symbol 2/5 Value Test Conditions Min. Typ. Max. Unit POUT f = 1.65 GHz PIN = 0.6 W VCE = 28 V 10 — — W GP ηc f = 1.65 GHz PIN = 0.6 W VCE = 28 V 11 — — dB f = 1.65 GHz PIN = 0.6 W VCE = 28 V 45 — — % COB f = 1 MHz VCB = 28 V — 19 — pF SD1893-03 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 1.5 GHz Z IN (Ω) 2.5 + j 4.5 ZCL (Ω) 3.5 − j 2.6 1.6 GHz 2.0 + j 6.0 3.0 − j 3.3 1.7 GHz 2.0 + j 7.0 3.5 − j 4.0 FREQ. 3/5 SD1893-03 TEST CIRCUIT C1, C2 : .4 - 2.5pF Johanson Capacitor #27283 C3 : 100pF Chip Capacitor ATC 100 A101KCA 150 C4 : 15,000pF EMI Filter Murata/Erie 9900-381-6004 L1, L2 : 4 Turn, Choke #28 AWG .080” I.D. Board Material: Epsilam 10, Er = 10.2, H = .050” 1 Oz. Cu. SMA Launcher CDI (2 poeces) .230” Fixture Housing Heatsink, Advanced Corp. 5308-2CC 4/5 SD1893-03 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0151 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5