SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ■ ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION The SD2903 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz M229 (epoxy sealed) ORDER CODE BRANDING SD2903 SD2903 PIN CONNECTION 1. Drain 2. Drain 3. Source 4.Gate 5.Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS Parameter Drain Source Voltage V DGR Drain-Gate Voltage V GS Gate-Source Voltage ID P DI SS Tj T STG (RG S = 1 MΩ) Drain Current Power Dissipation Max. O perating Junction Temperature Storage T emperature Value Uni t 65 V 65 V ±20 V 5 A 100 W 200 o C -65 to 150 o C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance ∗ 1.75 0.40 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2903 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section) Symb ol Parameter Min. IDS = 15 mA 65 Typ . Max. Un it V (BR)DSS V GS = 0V I DSS V GS = 0V VDS = 28 V 1.5 mA I GSS V GS = 20V V DS = 0 V 1.0 µA V GS(Q) V DS = 10V ID = 30 mA 6.0 V V DS( ON) V GS = 10V ID = 1.5 A 1.6 V V 1.0 g FS V DS = 10V ID = 1.5 A C ISS V GS = 0V V DS = 28 V f = 1 MHz 23 pF C OSS V GS = 0V V DS = 28 V f = 1 MHz 18 pF C RSS V GS = 0V V DS = 28 V f = 1 MHz 3.5 0.6 mho pF REF. 1021309H DYNAMIC (Total Device) Symb ol Parameter P OUT f = 400 MHz V DD = 28 V G PS f = 400 MHz V DD = 28 V ηD f = 400 MHz Load f = 400 MHz Mismatch All Angles Min. Max. Un it 30 P out = 30 W I DQ = 100 mA 13 15 dB V DD = 28 V P out = 30 W I DQ = 100 mA 45 50 % V DD = 28 V P out = 30 W I DQ = 100 mA 5:1 IMPEDANCE DATA FREQ . Z IN (Ω) Z DL (Ω) 400 MHz 4.6 - j 12 13.6 + j 10 Measured Gate to Gate and Drain to Drain, Respectively. 2/8 Typ . I DQ = 100 mA W VSW R SD2903 TYPICAL PERFORMANCE Maximum Thermal Resistance vs Case Temperature Capacitance vs Drain-Source Voltage GC83780 GC83770 2.1 Ciss f = 1 MHz RTH(j-c) (ºC/W) C, CAPACITANCES (pF) 100 Coss 10 1.9 Crss 1 0 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1.7 25 45 65 85 Tc, CASE TEMPERATURE (ºC) Drain Current vs Gate Voltage Gate-Source Voltages vs Case Temperature GC83790 ID, DRAIN CURRENT (A) T = -20°C 4 T = 25°C VDS = 10V 3 T = 80°C 2 1 0 5 6 7 8 9 10 VGS, GATE-SOURCE VOLTAGE (NORMALIZED) GC83800 5 1.05 ID = 3A ID = 2 A 1 I D = 1.25 A ID = 500 mA 0.95 VDD= 10V ID = 25 mA 0.9 -25 0 25 50 75 100 Tc, CASE TEMPERATURE (ºC) VGS, GATE-SOURCE VOLTAGE (VOLTS) 3/8 SD2903 TYPICAL PERFORMANCE Output Power vs Input Power Output Power vs Input Power GC83810 40 GC83820 50 Pout, OUTPUT POWER (W) Pout, OUTPUTPOWER (W) Vdd = 28 V 30 20 Tc=25°C f = 400 MHz IDQ = 100 mA 10 T = 25° C T = -20°C 40 30 T =80°C 20 IDQ = 100 mA VDD = 28 V f = 400 MHz 10 Vdd = 13.5 V 0 0.05 0.45 0.85 0 0.05 1.25 0.45 0.85 1.25 Pin, INPUT POWER (W) Pin, INPUT POWER (W) Output Power vs Voltage Supply Output Power vs Gate Voltage GC83840 40 GC83830 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 40 Pin = 1.2 W 30 IDQ = 100 mA f = 400 MHz Pin = .6 W 20 Pin = .3 W 10 T =-20 ºC T = 25 ºC 30 T = 80 ºC 20 10 VDD = 28V IDQ = 100mA f = 400MHz Pin = Constant 0 13 18 23 28 0 VDD, SUPPLY VOLTAGE (VOLTS) 3 Power Gain vs Output Power 4 5 6 VGS, GATE-SOURCE VOLTAGE(VOLTS) 7 Efficiency vs Output Power GC83850 GC83860 60 50 EFFICIENCY(%) PG, POWER GAIN (dB) 20 18 16 40 30 Tc= 25°C f = 400 MHz IDQ = 100 mA 20 Tc = 25°C f = 400 MHz IDQ = 100 mA 10 0 14 0 10 20 Pout, OUTPUT POWER (W) 4/8 30 40 10 20 Pout, OUTPUT POWER (W) 30 40 SD2903 400 MHz Test Circuit Schematic 400 MHz Test Circuit Component Part List 5/8 SD2903 400 MHz Test Circuit Photomaster REF. 1022349A Production Test Fixture 6/8 SD2903 M229 (.230 x .360 WIDE 4L BAL N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.45 4.70 0.175 0.185 B 1.40 1.65 0.055 0.065 C 11.94 12.95 0.470 0.510 D 5.72 6.10 0.225 0.240 E 2.92 0.115 F 18.29 18.54 0.720 0.730 G 24.64 24.89 0.970 0.980 H 9.02 9.27 0.355 0.365 I 0.10 0.15 0.004 0.006 J 3.18 3.43 0.125 0.135 K 4.06 4.32 0.160 0.170 L 5.84 6.60 0.230 0.260 Controlling dimension : Inches 1008194C 7/8 SD2903 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 8/8