SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS .. .. .. .. . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN η C = 55% TYPICAL TYPICAL LOAD MISMATCH CAPABILITY: 20:1 ALL ANGLES RATED CONDITIONS 10:1 ALL ANGLES @ ± 20% RATED VOLTAGE TYPICAL OVERDRIVE SURVIVABILITY 5 dB DESCRIPTION The SD4017 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity class AB operation for cellular base station applications. .230 6LFL (M142) epoxy sealed ORDER CODE SD4017 BRANDING SD4017 PIN CONNECTION 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 48 V VCEO Collector-Emitter Voltage 25 V VEBO Collector-Supply Voltage 3.5 V PDISS Power Dissipation 88 W IC Device Current 7.5 A TJ Junction Temperature 200 °C T STG Storage Temperature − 65 to +150 °C 2.0 °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance July 19, 1994 1/7 SD4017 ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 100 mA 48 55 — V BVEBO IE = 10 mA 3.5 5 — V BVCEO IC = 40 mA 25 28 — V BVCER IC = 40 mA 30 40 — V ICBO VCE = 24 V 10 — — mA hFE VCE = 20 V 15 40 100 — RBE = 150 Ω IC = 2 A DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT ηc f = 860 MHz VCE = 25 V ICQ = 60 mA 30 — — W f = 860 MHz VCE = 25 V ICQ = 60 mA — 55 — % PG f = 860 MHz VCE = 25 V ICQ = 60 mA 7.5 9 — dB COB VCB = 25 V fo = 1 MHz — 42 — pf IMD3 POUT = 30 WPEP f1 = 860.0 MHz — −35 — dBc VSWR1 VSWR = 20:1 VSWR = 10:1 VCE = 25 V VCE = 25 V ± 20% No Degradation in Output Device Typ. VSWR2 VSWR = 5:1 PIN = PIN (norm) +3dB VCE = 25V ± 20% No Degradation in Output Device Typ. PIN(norm) = +5dB PIN(norm) = +3dB VCE = 25 V VCE = 25 V ± 20% No Degradation in Output Device Typ. OVD 2/7 f2 = 860.1 MHz SD4017 TYPICAL PERFORMANCE DC CURRENT GAIN vs COLLECTOR CURRENT OUTPUT CAPACITANCE vs C-B VOLTAGE 85 150 80 140 75 130 VCE Vce 25V = =25V 70 120 65 h 60 C 55 O F 50 E 45 B 20V VCE Vce = =20V 40 110 100 90 p 80 F 70 F1 = 1MHz IC = 0 35 60 30 Pulsed Measurement 25 50 40 20 15 30 0 1 2 3 4 5 0 2 4 6 8 COLLECTOR CURRENT A 12 14 16 18 20 22 24 26 28 30 COLLECTOR VOLTAGE V DC SAFE OPERATING AREA POWER GAIN vs CASE TEMPERATURE 9.4 10 P I O C ∆PGAIN 9.2 -0.03dB/°C 9 W E M R A X I 10 G 1 A M 8.8 8.6 8.4 8.2 I U N M 8 Output Power Held Constant = 30WCW V CE = 25V ICQ = 60mA 7.8 d A B 7.6 7.4 BVCER 7.2 0.1 0 10 20 30 C-E BREAKDOWN VOLTAGE V 40 50 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 CASE TEMPERATURE C 3/7 SD4017 TYPICAL PERFORMANCE (cont’d) OUTPUT POWER vs INPUT POWER OUTPUT POWER & GAIN vs VOLTAGE 40 50 O U O U 35 T T P P 45 P PG Pg 30 U T 10 40 T 25 O W U E 35 R POUT Pout P P 20 O W W 15 E E R R G A 25 I N 10 VCE = 25V ICQ = 60mA W C 30 O 5 20 Input Power Set = 3.5WCW ICQ Constant = 60mA W C W 15 d B W 0 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 14 INPUT POWER WCW 1 16 18 20 22 24 26 28 30 32 34 36 COLLECTOR VOLTAGE V IM DISTORTION vs OUTPUT POWER IM3 DISTORTION vs SUPPLY VOLTAGE NO TUNING for SHIFT in LOAD LINE with VOLTAGE -25 -18 -20 -30 -22 IM3 I I -35 M M -40 3 d B d IM7 -45 B F1 = 860.0MHz F2 = 860.1MHz Two Tones @ PEP-6dB each tone -50 -26 -28 -30 -32 -34 -36 -55 -38 0 5 10 15 20 25 30 OUTPUT POWER WPEP 4/7 POUT Set = 30WPEP No ICQ Adj for V CE D IM5 D -24 35 40 45 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 COLLECTOR VOLTAGE V SD4017 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 800MHz 800MHz FREQ. Z IN (Ω) ZCL (Ω) 800 MHz 4.3 + j 5.8 3.5 + j 0.2 830 MHz 3.2 + j 6.1 3.5 + j 0.1 860 MHz 3.5 + j 7.1 2.9 − j 0.2 900 MHz 5.3 + j 6.4 3.0 − j 0.6 915 MHz 6.1 + j 6.3 3.2 − j 0.7 930 MHz 9.4 + j 6.3 3.2 − j 1.1 945 MHz 6.6 + j 3.0 3.3 − j 1.2 960 MHz 5.9 + j 1.0 3.4 − j 1.5 960MHz 960MHz POUT = 30W VCE = 25 V Normalized to 50 ohms 5/7 SD4017 TEST CIRCUIT C1, C19 : 33pF ATC 100B Chip Capacitor C2, C15 : 3.6pF ATC 100B Chip Capacitor C3 : 4.5pF ATC 100B Chip Capacitor C4, C16 C17 : 5.0pF ATC 100B Chip Capacitor C5 : 2.9pF ATC 100B Chip Capacitor C6, C7 : 1.8pF ATC 100B Chip Capacitor C8,C9, C14 : 6.2pF ATC 100B Chip Capacitor C10,C22 : 300pF ATC 100B Chip Capacitor C11,C12 C13 : 5.6pF ATC 100B Chip Capacitor C18 : .5 - 6.0pF Gigatrim Adjustable Capacitor BOARD LAYOUT 6/7 C20 C21 L9 L10 L11 TL1,TL8 TL2,TL3 TL4 TL5 TL6 TL7 : 10pF ATC 100B Chip Capacitor : 10µF (50V) Electrolytic Capacitor : 4 Turns (tight) I.D. 120mil ENAM Cu 20 AWG : 4 Turns (tight) I.D. 158mil ENAM Cu 18 AWG : 1.5 Turns VK-200 Ferrite H.F. Choke : 964 x 85.69 mils (50Ω/36.84°) : 352 x 85.69 mils (50Ω/13.46°) : 222 x 109.03 mils (42.6Ω /8.56°) : 149 x 109.03 mils (42.6Ω /5.74°) : 334 x 85.69 mils (50Ω/12.75°) : 500 x 85.69 mils (50Ω/19.13°) Board MAterial: 1oz Copper 2 sides, Thickness Er = 2.55 = 31.25mil SD4017 PACKAGE MECHANICAL DATA Ref. Dwg.No. 12-0142 rev. C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7