SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION ν ν ν ν ν ν ν ν GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE POUT =150 W MIN. GAIN = 8.5 dB MIN. IMD3 = -28dB MAX. @ POUT = 150W PEP INHERENT RUGGEDNESS: LOAD MISMATCH TOLERANCE OF 5:1 MIN. VSWR 3 dB OVERDRIVE CAPABILITY ESD SENSITIVITY, CLASS 3 (MIL STD-883D METHOD 3015) M208 epoxy sealed ORDER CODE BRANDING SD4590 SD4590 PIN CONNECTION DESCRIPTION The SD4590 is designed for both analog and digital cellular base stations over the 800 to 960 MHz frequency range, specifically those systems requiring the high linearity and efficiency afforded by class AB operation. Integrated input/output pre-matching simplifies amplifier design. Ruggedness, MTTF, and linearity are enhanced using diffused emitter resistors and refractory/gold metallization. 1. Collector 2. Emitter 3.Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol Parameter Value Uni t V CBO Collector-Base Voltage 65 V V CEO Collector-Emitter Voltage 28 V V EBO Emitter-Base Voltage 3.5 V Device Current 25 A Power Dissipation 300 W Max. O perating Junction Temperature 200 o C -65 to 150 o C IC P DI SS Tj T STG Storage Temperature THERMAL DATA R th (j-c) March 2000 Junction-Case Thermal Resistance 0.60 o C/W 1/8 SD4590 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol Parameter Min. Typ . Max. Un it BV CBO I C = 100 mA V BE = 0 V 65 80 V BV CEO I C = 100 mA I B = 0 mA 28 30 V BV CER IC = 100 mA R BE = 80 Ω 33 40 V BV EBO I C = 50 mA I C = 0 mA 3.5 4.0 I CEO V CE = 26 V VBE = 0 V 10 mA I CEO V CE = 10 V VBE = 0 V 0.5 mA V I EBO V BE = 1 V V CE = 0 V 0.1 mA I EBO V BE = 2.5V VCE = 0 V 3 mA h FE V CE = 5V IC = 6 A 25 45 TESTED PER SIDE 120 REF 1016365E DYNAMIC Symb ol C OB Parameter Min. f = 1 MHz V CB = 26 V for information only - this part is collector matched Typ . Max. 75 Un it pF DYNAMIC (CW) Symb ol Parameter Min. Typ . Max. Un it 21 W PI N f = 900 MHz V CE = 26 V ICQ = 2x200 mA P OUT = 150 W P OUT f = 900 MHz V CE = 26 V ICQ = 2x200 mA P IN = 21 W 150 175 W GP f = 900 MHz V CE = 26 V ICQ = 2x200 mA P OUT = 150 W 8.5 9.5 dB ηC f = 900 MHz V CE = 26 V ICQ = 2x200 mA P OUT = 150 W 50 55 % P 1 dB f = 900 MHz V CE = 26 V ICQ = 2x200 mA 150 160 W OVD f = 900 MHz V CE = 26 V ICQ = 2x200 mA Set P OUT = 150 W PEP; Increase P IN 3dB No Degratation in Device Performance DYNAMIC (Two-Tone) Symb ol Parameter Typ . Max. Un it *G P V CE = 26 V ICQ = 2x200 mA P OUT = 150 W PEP 8.5 9.5 dB *η C V CE = 26 V ICQ = 2x200 mA P OUT = 150 W PEP 30 35 % *IMD 3 V CE = 26 V ICQ = 2x200 mA P OUT = 150 W PEP *Load V CE = 26 V ICQ = 2x200 mA P OUT = 150 W PEP Mismatch VSWR = 5:1 MIN @ All Phase Angles *OVD V CE = 26 V ICQ = 2x200 mA Set P OUT = 150 W PEP; Increase P IN 3dB Note : f1 = 900.00 MHz f2 = 900.10 MHz 2/8 Min. -32 -28 dBT No Degratation in Device Performance No Degratation in Device Performance SD4590 TYPICAL PERFORMANCE Output Power vs Input Power VCE = 26V ICQ = 40 0mA Output Power vs Frequency 900 MHz PIN = 860 MHz 36W 30W 960 MHz 24W 18W 12W 6W VCE = 26V ICQ = 400mA Output Power vs Supply Voltage FREQ = 900MHz ICQ = 400mA PIN = Intermodulation Distortion vs Output Power 36W ORDER 24W RD 3 5 TH 16W 7 TH 9 8W TH F1 = 90 0.00MHz F2 = 90 0.10MHz V CE = 26V ICQ = 40 0mA Power Gain vs Output Power 1200mA POWER GAIN (dB) ICQ = Broadband Performance 900mA 600mA ηC 400mA RL PG P OUT = 150WPEP VCE = 26V ICQ = 400mA IMD 300mA FREQ = 900MHz VCE = 26 mA 3/8 SD4590 SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES ZIN A B B A ZCL NOTE: A = 800MHz B = 1000MHz (Measured in 10MHz increments) FREQ. 800 MHz 820 MHz 840 MHz 860 MHz 880 MHz 900 MHz 920 MHz 940 MHz 960 MHz 980 MHz 1000 MHz 4/8 Z IN (Ω) 4.25 + j 12.25 4.75 + j 13.25 5.25 + j 12.50 4.75 + j 10.25 6.25 + j 9.00 7.75 + j 10.25 6.50 + j 11.50 6.50 + j 10.25 8.50 + j 9.50 9.25 + j 11.50 8.50 + j 13.25 ZCL (Ω) 5.75 − j 4.25 5.00 − j 2.75 5.50 − j 2.50 5.00 − j 3.00 4.60 − j 2.90 4.25 − j 2.90 3.95 − j 2.90 3.80 − j 2.80 3.40 − j 2.85 3.10 − j 3.00 2.75 − j 3.15 CONDITIONS: VCE = 26V ICQ = 2 X 200mA POUT = 150W PEP IMD 3 ≤ -28dBT (∆ f1 f2 = 100KHz) SD4590 TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST PCB Balun 1,2 ε ROGERS, r = 2.55, Height = 31.25 mil 1 oz. Cu. 50 Ω Coaxial Cable Lenght 2.2” attached to 2 x 50 Ω printed microstrip transmission lines (see photomaster) C1, C2, C23, C25 75pF Ceramic Chip ATC B C3, C4, C21, C22 2 x 47pF Ceramic Chip, ATC B C5, C16 0.8 - 8pF Variable, JOHANSON Giga - Trim C6, C9 750pF Ceramic Chip, ATC B C7, C10 39nF Ceramic Chip, ATCB C8, C11, C24, C26 47µF, 50V Electrolytic C13, C17 100µF, 50V Electrolytic C12 9.1pF, Ceramic Chip, ATC A C14, C18 39nF Ceramic Chip (OPTIONAL) C15, C19 750pF Ceramic Chip (OPTIONAL) C20 1.3pF Ceramic Chip, ATC B L1, L4, L5, L8 12 Turns, #200 AWG, 0.15” I.D. (Tight) L2, L3, L6, L7 4 Turns, #20AWG, 0.13” I.D. (1:1) R1, R2, R3, R4 5 X 50 Ω Chip Resistor 5/8 SD4590 TEST CIRCUIT PHOTOMASTER 6/8 SD4590 7/8 SD4590 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8