SD56120 ® RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ■ ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 100 W PEP WITH 13 dB GAIN @ 860 MHz BeO FREE PACKAGE DESCRIPTION The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. M246 epoxy sealed ORDER CODE SD56120 BRANDING XSD56120 PIN CONNECTION 1. Drain 2. Drain 3. Source 4. Gate 5. Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol Parameter V (BR)DSS Drain Source Voltage V GS ID P DISS Tj T STG Gate-Source Voltage Drain Current Value Unit 65 V ± 20 V 14 A Power Dissipation (@ Tc= 70 o C) 260 W Max. Operating Junction Temperature 200 o C -65 to 150 o C Storage Temperature THERMAL DATA R th(j-c) Junction-Case Thermal Resistance November 1999 0.5 o C/W 1/4 SD56120 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section) Symbol Parameter Min. 65 Typ. Max. Unit V (BR)DSS V GS = 0V I DS = 10 mA I DSS V GS = 0V V DS = 28 V 1 µA I GSS V GS = 20V V DS = 0 V 1 µA V GS(Q) V DS = 28V I D = 100 mA 5.0 V V DS(ON) V GS = 10V ID = 3 A 0.7 G FS V DS = 10V ID = 3 A 3 mho C ISS V GS = 0V V DS = 28 V f = 1 MHz 88 pF C OSS V GS = 0V V DS = 28 V f = 1 MHz 44 pF C RSS V GS = 0V V DS = 28 V f = 1 MHz 1.7 pF V 3.0 0.8 V DYNAMIC Symbol Parameter Typ. Max. Unit P OUT V DD = 28V f = 860 MHz I DQ = 400 mA 100 W G PS V DD = 28 V P out = 100W PEP I DQ = 400 mA 13 dB ηD V DD = 28 V P out = 100W PEP I DQ = 400 mA 30 IMD V DD = 28 V P out = 100W PEP I DQ = 400 mA Load f = 860 MHz Mismatch I DQ = 400 mA Note : f1 = 860 MHz f2 = 860.1 MHz 2/4 Min. V DD = 28 V P out = 100W PEP ALL PHASE ANGLES 5:1 36 % 31 dB VSWR SD56120 M246 (.230 x .650 WIDE 4/L BAL N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 5.33 5.59 0.210 0.220 B 6.48 6.73 0.255 0.265 C 17.27 18.29 0.680 0.720 D 5.72 5.97 0.225 0.235 E 22.86 0.900 F 28.83 29.08 1.135 1.145 G 16.26 16.76 0.640 0.660 H 4.19 5.08 0.165 0.200 I 0.08 0.15 0.003 0.006 J 1.83 2.24 0.072 0.088 K 1.40 1.65 0.055 0.065 L 3.18 3.43 0.125 0.135 Controlling dimension : Inches 7145054A 3/4 SD56120 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 4/4