SD8250 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .. . .. .. . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 250 W MIN. WITH 8.0 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE SD8250 BRANDING STAN250A PIN CONNECTION DESCRIPTION The SD8250 is a high power Class C transistor specifically designed for TACAN/DME pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF overdrive. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The SD8250 is supplied in the AMPAC Hermetic Metal/Ceramic package with internal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 575 W Device Current* 20 A Collector-Supply Voltage* 55 V 250 °C − 65 to +200 °C 0.28 °C/W Power Dissipation* (TC ≤ 90°C) Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance(1) *Applies only to rated RF amplifier operation (1) Infra-Red Scan of Hot Spot Junction Temperature at Rated RF Operating Conditions July 19, 1994 1/5 SD8250 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 35mA IE = 0mA 65 — — V BVEBO IE = 15mA IC = 0mA 4.0 — — V BVCES IC = 25mA IB = 0mA 60 — — V ICES VBE = 0V VCE = 50V — — 20 mA hFE VCE = 5V IC = 1A 10 — — — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. Unit POUT ηc f = 960 — 1215 MHz PIN = 40 W VCC = 50 V 250 295 — W f = 960 — 1215 MHz PIN = 40 W VCC = 50 V 38 44 — % PG f = 960 — 1215 MHz PIN = 40 W VCC = 50 V 8.0 8.7 — dB Note: Pul se Widt h Duty Cycle TC = = = 20 µ Sec 5% 25°C TYPICAL PERFORMANCE TYPICAL BROADBAND I TYPICAL BROADBAND POWER POWER AMPLIFIER AMPLIFIER N P U INPUT VSWR vs FREQUENCY 5.1 T 100 400 POUT PIN P O 350 = 40W 90 C O W PIN = 32W E R 300 L C O 250 PIN T 70 = 25W R PIN 150 E ηC = 40W F 50 T T PIN 100 = 32W 40 PIN = 25W S 30 50 960 1090 FREQUENCY (MHz) 2/5 F . A 1215 V S W R . 1.1 960 60 200 T W T O P U . 3.1 L 80 E U I N S P W U R T V % 1090 FREQUENCY (MHz) 1215 SD8250 TYPICAL PERFORMANCE (cont’d) TYPICAL RELATIVE OUTPUT & COLLECTYPICAL POWER OUTPUT & COLLECTOR TOR EFFICIENCY COLLECTOR VOLTAGE EFFICIENCY vs vs COLLECTOR VOLTAGE 80 100 P O W 90 POUT C 70 80 E R O L L 70 E O U T P U T 60 60 C T O 50 R ηC 40 50 E F W A 30 T 20 F . 40 T S % 10 0 30 30 35 40 45 50 COLLECTOR VOLTAGE (VOLTS) IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN ZIN M L H TYPICAL COLLECTOR LOAD IMPEDANCE M H ZCL L ZCL L = 960 MHz ZIN (Ω) 1.0 + j 3.5 M = 1090 MHz H =1215 MHz 4.0 + j 3.5 1.6 − j 0.9 2.2 + j 2.2 1.4 − j 1.1 FREQ. Z CL (Ω) 1.9 − j 1.8 PIN = 40 W VCC = 50 V Normalized to 50 ohms 3/5 SD8250 TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 C4 4/5 : : : : 100 µF Electrolytic Capacitor, 63V .1 µF Ceramic Capacitor Feedthru Bypass SCI 712-022 Johanson 7475 Gigatrim .6 — 4.5 pF C5 C6 L1 L2 : : : : Johanson 7475 Gigatrim .6 — 4.5 pF D.C. Block 100 pF #26 Wire, 4 Turn .062 I.D. #26 Wire, 4 Turn .062 I.D. SD8250 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0222 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5