STMICROELECTRONICS SMBYW01-200

SMBYW01-200
®
HIGH EFFICIENCY FAST RECOVERY DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
1A
VRRM
200 V
VF(max)
0.71 V
Tj (max)
150 °C
FEATURES AND BENEFITS
VERY LOW SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP BIPOLAR
DEVICE
LOW PEAK FORWARD VOLTAGE FOR TELECOM TRANSIENT OPERATION SUCH AS IN
LIGHTING PROTECTION CIRCUITS
SMB
(JEDEC DO-214AA)
DESCRIPTION
Single chip rectifier suited to Switch Mode Power
Supplies and high frequency DC to DC converters.
Packaged in SMB, this surface mount device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
RMS forward current
IF(AV)
Average forward current
IFSM
Surge non repetitive forward current
Tstg
Storage and junction temperature range
Tj
Maximum operating junction temperature
October 1999 - Ed: 4A
Value
Unit
200
V
8
A
Tlead=140°C
δ = 0.5
1
A
tp=10ms
sinusoidal
60
A
- 65 to + 150
°C
150
°C
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SMBYW01-200
THERMAL RESISTANCES
Symbol
Rth (j-l)
Parameter
Value
Unit
13
°C/W
Junction to lead
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF *
IR **
Parameters
Test Conditions
Forward voltage drop
Reverse leakage current
Tj = 25°C
IF = 1 A
Tj = 150°C
IF = 1 A
Tj = 25°C
VR = VRRM
Min.
Typ.
0.65
Max.
Unit
0.9
V
0.71
3
Tj = 125°C
µA
180
400
Typ.
Max.
Unit
25
ns
Pulse test : * tp = 380 µs, δ < 2 %
** tp = 5 ms, δ < 2 %
To evaluate the maximum conduction losses use the following equation :
P = 0.58 x IF(AV) + 0.118 x IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
Test Conditions
Tj = 25°C
IF = 0.5 A
Min.
Irr = 0.25 A IR = 1A
IF = 1 A
dIF/dt = - 50 A/µs VR = 30V
25
35
tfr
Tj = 25°C
IF = 1A
dIF/dt = 100 A/µs
25
ns
VFP
Tj = 25°C
IF = 1A
dIF/dt = 100 A/µs
5
V
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SMBYW01-200
Fig. 1: Average forward power dissipation versus
average forward current .
Fig. 2: Peak current versus form factor.
IM(A)
PF(av)(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
δ = 0.05
δ = 0.1
δ = 0.2
10
9
8
7
6
5
4
3
2
1
0
0.0
δ = 0.5
δ=1
IF(av) (A)
0.2
0.4
0.6
0.8
1.0
P=1.5W
P=1.0W
P=0.5W
P=0.25W
0.1
0.2
0.3
0.4
1.2
Fig. 3: Average forward current versus ambient
temperature (δ=0.5).
0.5
δ
0.6
0.7
0.8
0.9
1.0
Fig. 4: Non repetitive surge peak forward current
versus overload duration.
IF(av)(A)
IM(A)
1.2
8
Rth(j-a)=Rth(j-l)
1.0
7
0.8
6
0.6
Ta=25°C
5
Ta=50°C
Rth(j-a)=100°C/W
0.4
4
3
0.2
Ta=75°C
Tamb(°C)
0.0
0
25
50
75
100
125
150
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35µm).
t(s)
2
1E-3
1E-2
1E-1
1E+0
Fig 6: Forward voltage drop versus forward current
(maximum values).
VFM(V)
Zth(j-a)(°C/W)
50.00
1.00
10.00
δ = 0.5
Tj=125°C
δ = 0.2
0.10
1.00
δ = 0.1
Tj=25°C
0.10
Single pulse
tp(s)
0.01
1E-2
1E-1
1E+0
IFM(A)
1E+1
1E+2
5E+2
0.01
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3/5
SMBYW01-200
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 8: Reverse recovery current versus dIF/dt .
C(pF)
IRM(A)
6
12
F=1MHz
Tj=25°C
10
IF=IF(av)
90% confidence
Tj=125°C
5
8
4
6
3
4
2
2
1
VR(V)
0
1
dIF/dt(A/µs)
10
100
200
Fig. 9: Reverse recovery time versus dIF/dt.
0
0
dIF/dt(A/µs)
20
60
80
100 120 140 160 180 200
Qrr(nC)
IF=IF(av)
90% confidence
Tj=125°C
0
40
Fig. 10: Reverse recovery charges versus dIF/dt.
trr(ns)
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80
100 120 140 160 180 200
Fig. 11: Dynamic parameters versus junction
temperature.
100
90
80
70
60
50
40
30
20
10
0
IF=IF(av)
90% confidence
Tj=125°C
dIF/dt(A/µs)
0
20
40
60
80
100 120 140 160 180 200
Fig. 12: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35µm)
Rth(j-a) (°C/W)
Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
120
1.25
100
1.00
80
IRM
0.75
60
40
Qrr
0.50
20
Tj(°C)
0.25
4/5
0
25
50
75
S(Cu) (cm²)
100
125
150
0
0
1
2
3
4
5
SMBYW01-200
PACKAGE MECHANICAL DATA
SMB
E1
DIMENSIONS
REF.
A1
A2
C
L
Inches
Min.
Max.
Min.
Max.
A1
A2
b
c
1.90
0.05
1.95
0.15
2.45
0.20
2.20
0.41
0.075
0.002
0.077
0.006
0.096
0.008
0.087
0.016
E
E1
D
L
5.10
4.05
3.30
0.75
5.60
4.60
3.95
1.60
0.201
0.159
0.130
0.030
0.220
0.181
0.156
0.063
D
E
Millimeters
b
FOOT PRINT DIMENSIONS (in millimeters)
SMB (Plastic)
2.3
1.52
2.75
1.52
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
SMBYW01-200
B20
SMB
0.11g
2500
Tape & reel
Band indicates cathode
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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