SMBYW02-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM 2A 200 V VF(max) 0.85 V Tj (max) 150 °C FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY LOW FORWARD AND REVERSE RECOVERY TIMES SMB (JEDEC DO-214AA) DESCRIPTION Single chip rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward current 10 A IF(AV) Average forward current Tl=100°C δ = 0.5 2 A IFSM Non repetitive surge peak forward current tp=10ms sinusoidal 50 A Tstg Storage temperature range - 65 to + 150 °C 150 °C Tj Maximum operating junction temperature October 1999 - Ed: 4C 1/5 SMBYW02-200 THERMAL RESISTANCE Symbol Rth (j-l) Parameter Junction to leads Value Unit 25 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Parameters Test Conditions Reverse Leakage Current Forward Voltage Drop Tj = 25°C IF = 6 A Tj = 100°C IF = 2 A Tj = 25°C VR = VRRM Min. Typ. 0.8 Tj = 100°C Max. Unit 1.25 V 0.85 10 µA 0.1 0.3 mA Typ. Max. Unit 26 35 Pulse test : * tp = 380 µs, δ < 2 % ** tp = 5 ms, δ < 2 % To evaluate the conductionlosses use the following equation : P = 0.7 x IF(AV) + 0.075 x IF2 (RMS) RECOVERY CHARACTERISTICS Symbol Test Conditions Min. trr Tj = 25°C IF = 1A tfr Tj = 25°C IF = 2A dIF/dt = -50A/µs VFR = 1.1 x VF max 30 ns VFP Tj = 25°C IF = 2A 5 V 2/5 dIF/dt = -50A/µs VR = 30V dIF/dt = -50A/µs ns SMBYW02-200 Fig. 1: Low frequency power losses versus average current. P F(av)(W) 60 2.5 =0.1 2.0 Fig. 2: Peak current versus form factor. T =1 =0.5 =0.2 IM(A) 50 =0.05 IM 40 =tp/T 1.5 tp 30 1.0 P=0.5W T 20 0.5 P=1.5W P=2.5W 10 I F(av)(A) 0.0 0.0 =tp/T tp 2.4 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Non repetitive surge peak forward current versus overload duration. Fig. 4: Relative variation of thermal impedance junction to lead versus pulse duration. 20.0 0.4 0.8 1.2 1.6 2.0 K IM(A) Zth(j-c) (tp. 17.5 1 K = Rth(j-c) IM 15.0 =0.5 t = 0.2 =0.5 12.5 10.0 Tc=25 oC 7.5 0.1 =0.1 T Tc=70 o C Singl e puls e 5.0 Tc=100 o C 2.5 0.0 0.001 t(s) 0.01 0.1 1 10 Fig. 5: Voltage drop versus forward current (maximum values). 1.8 ) VFM(V) 0.01 0.1 1 Fig. 6: Average current temperature(δ=0.5). 2.5 versus tp 10 ambient IF(av)(A) 1.6 1.4 =tp/ T tp(s) 0.01 0.001 Rth(j-a)=Rth(j-l) 2.0 Tl=100 oC 1.2 Rth(j-a)=75 o C/W 1cm2 Cu 1.5 1.0 0.8 1.0 =0.5 0.6 0.4 0.5 0.2 0.0 0.1 T I FM(A) 1 =tp/T 10 20 0.0 0 20 Tamb(o C) tp 40 60 80 100 120 140 160 3/5 SMBYW02-200 Fig. 7: Capacitance versus reverse voltage applied. Fig. 8: Recovery time versus dIF/dt. Fig. 9: Peak reverse current versus dIF/dt. Fig. 10: Dynamic parameters versus junction temperature. Fig. 11: Thermal resistance junction to ambient versus copper surface under each lead. Rth(j-a) 100 Printed circuit : epoxy (e=35 µm) 90 80 70 60 50 40 30 20 10 Scu(cm 2 ) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/5 SMBYW02-200 PACKAGE MECHANICAL DATA SMB E1 DIMENSIONS REF. D A1 A2 b c E E1 D L E A1 A2 C L b Millimeters Inches Min. Max. Min. Max. 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 FOOTPRINT DIMENSIONS (in millimeters) SMB 2.3 1.52 2.75 1.52 Ordering type Marking Package Weight Base qty Delivery mode SMBYW02-200 A20 SMB 0.11g 2500 Tape & reel Band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5