SMBYW04-200 BYW4200B ® HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 4A VRRM 200 V VF (max) 0.85 V Tj (max) 150 °C 2 3 4 (TAB) 4 FEATURES AND BENEFITS SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY 2 3 1(nc) DPAK BYW4200B DESCRIPTION SMC (JEDEC DO-214AB) SMBYW04-200 Single chip rectifier suited to Switch Mode Power Supplies and high frequency converters. Packaged in DPAK and SMC, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and rectification applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward current 10 A Tcase = 130°C Tlead = 70°C 4 A tp = 10 ms sinusoidal 70 A - 65 to + 150 °C 150 °C IF(AV) Average forward current δ = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj DPAK SMC Maximum operating junction temperature October 1999 - Ed: 4C 1/6 SMBYW04-200 / BYW4200B THERMAL RESISTANCE Symbol Parameter Package Value Unit Rth (j-c) Junction to case DPAK 5 °C/W Rth (j-l) Junction to leads SMC 20 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions IR * Reverse leakage current Tests Conditions Tj = 25°C Min. VR = VRRM Tj = 100°C VF ** Pulse test : Forward voltage drop Typ. 0.15 Tj = 25°C IF = 12 A Tj = 100°C IF = 4 A 0.8 Max. Unit 10 µA 0.5 mA 1.25 V 0.85 * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.7 x IF(AV) + 0.037 IF2(RMS) RECOVERY CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit 35 ns trr Tj = 25°C IF = 1A VF = 30V dIF/dt = -50 A/µs 26 tfr Tj = 25°C IF = 4A VFR = 1.1 x VF max dIF/dt = -50 A/µs 20 ns VFP Tj = 25°C IF = 4A dIF/dt = -50 A/µs 5 V Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Peak current versus form factor. PF(av)(W) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 IM(A) 20 18 16 14 12 10 8 6 P=1.0W 4 P=1.5W 2 0 0.0 0.1 0.2 2/6 δ = 0.05 δ = 0.1 δ = 0.2 δ=1 δ = 0.5 T IF(av) (A) 1.5 2.0 2.5 3.0 δ=tp/T 3.5 4.0 tp 4.5 5.0 T δ=tp/T tp P=2.0W P=2.5W δ 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 SMBYW04-200 / BYW4200B Fig. 3: Average forward current versus ambient temperature (δ=0.5). 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 IF(av)(A) 70.0 IFM(A) DPAK SMC Rth(j-a)=Rth(j-l) Tj=100°C (Typical values) Rth(j-a)=Rth(j-c) 10.0 Tj=25°C Tj=100°C Rth(j-a)=75°C/W 1.0 T δ=tp/T 0 VFM(V) Tamb(°C) tp 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (SMBYW04-200). 12 Fig. 4: Forward voltage drop versus forward current (maximum values). IM(A) 10 8 Ta=25°C 6 Ta=50°C IM 4 t t(s) δ=0.5 2 1E-3 1E-2 1E-1 1E+0 Fig. 6-1: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu)=35µm) (SMBYW04-200). 0.1 0.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (BYW4200B). IM(A) 50 45 40 35 30 25 20 15 10 IM 5 0 1E-3 Tc=125°C Tc=75°C t t(s) δ=0.5 1E-2 1E-1 1E+0 Fig. 6-2: Variation of thermal impedance junction to case versus pulse duration (BYW4200B). Zth(j-a)/Rth(j-a) 1.0 1.00 0.2 Zth(j-c)/Rth(j-c) δ = 0.5 δ = 0.5 δ = 0.2 0.10 0.5 δ = 0.2 δ = 0.1 δ = 0.1 Single pulse 0.2 T tp(s) 0.01 1E-2 1E-1 1E+0 δ=tp/T 1E+1 1E+2 T Single pulse tp(s) tp 5E+2 0.1 1E-3 1E-2 δ=tp/T 1E-1 tp 1E+0 3/6 SMBYW04-200 / BYW4200B Fig. 8: Reverse recovery time versus dIF/dt. Fig. 7: Reverse recovery current versus dIF/dt. IRM(A) 2.5 IF=IF(av) 90% confidence 2.0 1.5 Tj=100°C 1.0 Tj=25°C 0.5 dIF/dt(A/µs) 0.0 1 10 100 Fig. 9: Junction capacitance versus reverse voltage applied (typical values). 100 100 90 80 70 60 50 40 30 20 10 0 trr(ns) IF=IF(av) 90% confidence Tj=100°C Tj=25°C dIF/dt(A/µs) 1 10 100 Fig. 10: Dynamic parameters versus junction temperature. % C(pF) 250 F=1MHz Tj=25°C IF=4A dIF/dt=50A/µs VR=30V Qrr 50 200 IRM 150 20 trr VR(V) 10 1 10 100 200 Tj(°C) 100 25 50 75 100 125 150 Fig. 11-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35mm) (SMBYW04-200). Fig. 11-2: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35mm) (BYW4200B). Rth(j-a) (°C/W) 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 100 90 80 70 60 50 40 30 20 10 0 4/6 S(Cu) (cm²) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Rth(j-a) (°C/W) S(Cu) (cm²) 0 2 4 6 8 10 12 14 16 18 20 SMBYW04-200 / BYW4200B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0° 8° Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0° 8° FOOT PRINT (in millimeters) 6.7 6.7 3 3 1.6 1.6 2.3 2.3 5/6 SMBYW04-200 / BYW4200B PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF. D E A1 A2 C L E2 b A1 A2 b c E E1 E2 D L Millimeters Inches Min. Max. Min. Max. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 FOOT PRINT (in millimeters) 3.3 2.0 4.2 Ordering code 2.0 Marking SMBYW04-200 D20 BYW4200B W4200 BYW4200B-RL W4200 Epoxy meets UL 94,V0 Band indicates cathode Package Weight Base qty Delivery mode SMC DPAK DPAK 0.243g 0.30g 0.30g 2500 75 2500 Tape and reel Tube Tape and reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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