SMP100LC-xxx ® TELECOM EQUIPMENT PROTECTION: TRISIL™ FEATURES ■ ■ ■ ■ ■ ■ Bidirectional crowbar protection Voltage range from 8V to 262V Low capacitance from 30 pF to 45pF typ @ 50V Low leakage current : IR = 2 µA max Holding current: IH = 150 mA min Repetitive peak pulse current : IPP = 100 A (10/1000µs) MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes and power crossing: Analog and digital line cards (xDSL, T1/ E1, ISDN...) Terminals (phone, fax, modem...) and central office equipment SMB (JEDEC DO-214AA) ■ ■ SCHEMATIC DIAGRAM DESCRIPTION The SMP100LC-xxx series is a low capacitance transient surge arrestor designed for the protection of high debit rate communication equipment. Its low capacitance avoids any distortion of the signal and is compatible with digital line cards (xDSL, T1/E1, ISDN...). BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL1950, IEC950 / CSA C22.2 and UL1459. They have UL94 V0 approved resin. SMB package is JEDEC registered (DO-214AA). Trisils are UL497B approved (file: E136224) and comply with the following standards GR-1089 Core, ITU-T-K20/K21, VDE0433, VDE0878, IEC61000-4-5 and FCC part 68. July 2002 - Ed: 8C 1/8 SMP100LC-xxx IN COMPLIANCES WITH THE FOLLOWING STANDARDS STANDARD Peak Surge Voltage (V) Required Minimum serial Voltage Current peak current resistor to meet Waveform waveform (A) standard ( ) GR-1089 Core First level 2500 1000 2/10 µs 10/1000 µs 500 100 2/10 µs 10/1000 µs 0 0 GR-1089 Core Second level 5000 2/10 µs 500 2/10 µs 0 GR-1089 Core Intra-building 1500 2/10 µs 100 2/10 µs 0 ITU-T-K20/K21 6000 1500 10/700 µs 150 37.5 5/310 µs 0 0 ITU-T-K20 (IEC61000-4-2) 8000 15000 1/60 ns ESD contact discharge ESD air discharge 0 0 VDE0433 4000 2000 10/700 µs 100 50 5/310 µs 0 0 VDE0878 4000 2000 1.2/50 µs 100 50 1/20 µs 0 0 IEC61000-4-5 4000 4000 10/700 µs 1.2/50 µs 100 100 5/310 µs 8/20 µs 0 0 FCC Part 68, lightning surge type A 1500 800 10/160 µs 10/560 µs 200 100 10/160 µs 10/560 µs 0 0 FCC Part 68, lightning surge type B 1000 9/720 µs 25 5/320 µs 0 THERMAL RESISTANCES Symbol Parameter Unit Rth(j-a) Junction to ambient with recommended footprint 100 °C/W Rth(j-l) Junction to leads 20 °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol 2/8 Value Parameter VRM Stand-off voltage IRM Leakage current at VRM VR Continuous reverse voltage IR Leakage current at VR VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance SMP100LC-xxx ABSOLUTE RATINGS (Tamb = 25°C) Symbol Parameter Value Unit 100 250 120 150 200 250 500 A Repetitive peak pulse current: Ipp 10/1000 µs 8/20 µs 10/560 µs 5/310 µs 10/160 µs 1/20 µs 2/10 µs IFS Fail-safe mode : maximum current (note 1) 8/20 µs 5 kA ITSM Non repetitive surge peak on-state current (Sinusoidal) t = 20ms t = 16.6ms t = 0.2s t = 2s 55 60 25 12 A I²t I²t value for fusing t = 16.6ms t = 20ms 30 A²s TL Maximum lead temperature for soldering during 10s 260 °C Tstg Tj Storage temperature range Maximum junction temperature - 55 to + 150 150 °C °C Note 1: in fail safe mode, the device acts as a short circuit. Repetitive peak pulse current tr: rise time (µs) tp: pulse duration time (µs) ex: Pulse waveform 10/1000µs tr = 10µs tp = 1000µs % IPP 100 50 0 tr t tp ELECTRICAL PARAMETERS (Tamb = 25°C) Type IRM @ VRM max. IR @ VR max. Note 1 µA µA V V 6 8 25 22 25 40 32 35 55 SMP100LC-65 55 65 SMP100LC-90 81 SMP100LC-8 SMP100LC-25 SMP100LC-35 SMP100LC-120 2 V Static Dynamic C C IH VBO @ IBO VBO @ IBO min. typ. typ. max. max max. max Note 4 Note 5 Note 6 Note 2 Note 3 108 50 mA mA pF pF 15 50 (typ) NA 75 35 150 NA 65 55 150 NA 55 85 85 150 45 90 90 120 125 150 40 80 120 155 150 35 75 800 V 160 mA 800 SMP100LC-140 120 140 185 190 150 30 65 SMP100LC-160 144 160 210 220 150 30 65 SMP100LC-200 170 200 265 275 150 30 60 SMP100LC-230 200 230 300 320 150 30 60 SMP100LC-270 230 262 350 370 150 30 60 Note 1: Note 2: Note 3: IR measured at VR guarantee VBR min ≥ VR See functional test circuit 1 See test circuit 2 Note 4: Note 5: Note 6: See funtional holding current test circuit 3 VR = 50V bias, VRMS=1V, F=1MHz VR = 2V bias, VRMS=1V, F=1MHz 3/8 SMP100LC-xxx Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial = 25 °C). Fig. 2: On-state voltage versus on-state current (typical values) IT(A) ITSM(A) 50 70 Tj=25°C F=50Hz 60 50 10 40 30 20 10 VT(V) t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Fig. 3: Relative variation of holding current versus junction temperature . 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 Fig. 4: Relative variation of breakover voltage versus junction temperature. VBO[Tj] / VBO[Tj=25°C] IH[Tj] / IH[Tj=25°C] 1.08 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1.06 1.04 1.02 1.00 0.98 Tj(°C) Tj(°C) -25 0 25 50 75 100 125 Fig. 5: Relative variation of leakage current versus junction temperature (typical values). 0.96 -25 0 25 50 75 100 125 Fig. 6: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35µm, recommended pad layout). IRM[Tj] / IRM[Tj=25°C] Zth(j-a)(°CW) 2000 1000 100 VRM > 50V 100 10 VRM < 50V 10 Tj(°C) 1 25 4/8 50 75 tp(s) 100 125 1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 SMP100LC-xxx Fig. 7: Relative variation of junction capacitance versus reverse voltage applied (typical values). C [VR] / C [VR=2V] 1.4 Tj=25°C F=1MHz VRMS=1V 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VR(V) 1 2 5 10 20 50 100 300 TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS 100 V / µs, di/dt < 10 A / µs, Ipp = 100 A 2Ω U 83 Ω 45 Ω 10 µF 66 Ω 46 µH 0.36 nF 470 Ω KeyTek 'System 2' generator with PN246I module 1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A 250 Ω 26 µH U 60 µF 47 Ω 46 µH 12 Ω KeyTek 'System 2' generator with PN246I module 5/8 SMP100LC-xxx TEST CIRCUIT 2 FOR IBO and VBO parameters : K ton = 20ms R1 = 140Ω R2 = 240Ω 220V 50Hz DUT Vout VBO measurement 1/4 IBO measurement TEST PROCEDURE : Pulse test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. TEST CIRCUIT 3 FOR IH PARAMETER R VBAT = - 48 V Surge generator D.U.T This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs. - The D.U.T. will come back to the off-state within 50 ms max. 6/8 SMP100LC-xxx PACKAGE MECHANICAL DATA SMB (Plastic) DIMENSIONS E1 REF. D E A1 A2 C L b Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 D 3.30 3.95 0.130 0.156 L 0.75 1.60 0.030 0.063 FOOT PRINT in millimeters (inches) 2.3 (0.09) 1.52 (0.059) 2.75 (0.108) 1.52 (0.059) 7/8 SMP100LC-xxx ORDER CODE SMP 100 LC - xxx Low Capacitance Trisil Surface Mount Voltage IPP = 100 A Ordering type Marking SMP100LC-8 PL8 SMP100LC-25 L25 SMP100LC-35 L35 SMP100LC-65 L06 SMP100LC-90 L09 SMP100LC-120 L12 SMP100LC-140 L14 SMP100LC-160 L16 SMP100LC-200 L20 SMP100LC-230 L23 SMP100LC-270 L27 Package Weight Base qty Delivery mode SMB 0.11g 2500 Tape & Reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.