SMP30-xxx Series TRISILTM FEATURES n n n n n BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. JEDEC REGISTERED PACKAGE OUTLINE SMA (JEDEC DO-214AA) DESCRIPTION The SMP30-xxx series has been designed to protect telecommunication equipments against lightning surges and overvoltages induced by AC power lines. SCHEMATIC DIAGRAM Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Admissible Ipp (A) Necessary Resistor (Ω) (CCITT) ITU-K20 1000 10/700 5/310 25 - (CCITT) ITU-K17 1500 10/700 5/310 38 - VDE0433 2000 10/700 5/310 40 10 VDE0878 2000 1.2/50 1/20 50 - level 2 level 3 10/700 1.2/50 5/310 8/20 25 50 - FCC Part 68, lightning surge type A 1500 800 10/160 10/560 10/160 10/560 65 50 15.5 8.0 FCC Part 68, lightning surge type B 1000 9/720 5/320 25 - BELLCORE TR-NWT-001089 First level 2500 1000 2/10 10/1000 2/10 10/1000 125 30 15.0 23.3 BELLCORE TR-NWT-001089 Second level 5000 2/10 2/10 125 15.0 BELLCORE TR-NWT-001089 Intra building lightning 1500 2/10 2/10 100 - CNET l31-24 1000 0.5/700 0.8/310 25 - COMPLIES WITH THE FOLLOWING STANDARDS: IEC-1000-4-5 January 2000 - Ed: 5B 1/6 SMP30-xxx Series ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value Unit Tamb = 50 °C 3 W P Power dissipation on infinite heatsink IPP Peak pulse current 10/1000 µs 8/20 µs 30 60 A ITSM Non repetitive surge peak on-state current tp = 20 ms 15 A tp = 20 ms 1 A2s VRM 5 kV/µs - 55 to + 150 150 °C °C 260 °C 2 I t dV/dt 2 I t value for fusing Critical rate of rise of off-state voltage Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10s at 5mm for case THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Parameter Junction to leads Junction to ambient on printed circuit with standard footprint dimension ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol 2/6 Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VR Continuous Reverse voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance Value Unit 30 °C/W 120 °C/W SMP30-xxx Series Marking Type IRM @ VRM max SMP30-62 SMP30-68 SMP30-100 SMP30-120 SMP30-130 SMP30-180 SMP30-200 SMP30-220 SMP30-240 SMP30-270 Note 1: Note 2: Note 3: Note 4: Note 5: QAA QAB QAC QAD QAE QAF QAG QAH QAI QAJ IR @ VR max note 1 VBO @ IBO IH max note 2 C min typ typ note 3 note 4 note 5 µA V µA V V mA mA 2 2 2 2 2 2 2 2 2 2 56 61 90 108 117 162 180 198 216 243 50 50 50 50 50 50 50 50 50 50 62 68 100 120 130 180 200 220 240 270 82 90 133 160 173 240 267 293 320 360 800 800 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 150 150 pF 50 50 40 40 35 35 30 30 30 30 20 20 16 16 14 14 12 12 12 12 IR measured at VR guarantee VBRmin VR Measured at 50 Hz (1 cycle) - See test circuit 1. See test circuit 2. VR = 1V, F = 1MHz. VR = 50V, F = 1MHz TEST CIRCUIT 1 FOR IBO and VBO parameters : tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout IBO measure D.U.T V BO measure Transformer 220V/800V 5A TEST PROCEDURE : n n Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 250 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO 250 Volt - VOUT = 480 VRMS, R2 = 240 Ω. 3/6 SMP30-xxx Series TEST CIRCUIT 2 for IH parameter. R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : n 4/6 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. SMP30-xxx Series Fig. 1: Non repetitive surge peak on-sate current versus overload duration (Tj initial=25°C). Fig. 2: Relative variation of holding current versus junction temperature. IH[Tj] / IH[Tj=25°C] ITSM(A) 20 F = 50Hz 15 10 5 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 40 Tj(°C) t(s) Fig. 3: Relative variation of junction capacitance versus reverse applied voltage (typical values) 60 80 100 120 Fig. 4: On-state voltage versus on-state current (typical values). IT(A) C[VR]/C[VR=1V] 50 1.0 Tj = 25°C F = 1MHz 20 0.5 10 5 0.2 2 0.1 1 10 100 300 1 0 1 2 3 4 5 6 VT(V) VR(V) Fig. 5: Variation of thermal impedance junction to ambient versus pulse duration. 7 8 9 10 Fig. 6: Relative variation of VBO voltage versus junction temperature. Zth(j-a)(°CW) Vbo[Tj]/Vbo[Tj=25°C] 1.10 1E+2 1.05 1E+1 1.00 1E+0 1E-1 1E-3 0.95 1E-2 1E-1 1E+0 tp(s) 1E+1 1E+2 5E+2 270 V 62 V 0.90 -40 -20 0 20 40 Tj(°C) 60 80 100 5/6 SMP30-xxx Series ORDER CODE SMP 30 - 62 SURFACE MOUNT PROTECTION VOLTAGE IPP = 30 A MARKING : Logo, Date Code, Part Number. PACKAGE MECHANICAL DATA SMA (JEDEC DO-214AA) DIMENSIONS REF. E1 D E Millimeters Inches Min. Max. Min. Max. A1 1.90 2.70 0.075 0.106 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 E 4.80 5.60 0.189 0.220 E1 3.95 4.60 0.156 0.181 D 2.25 2.95 0.089 0.116 L 0.75 1.60 0.030 0.063 A1 A2 C L b FOOT PRINT (in millimeters) Weight: 0.06 g Packaging : Tape and reel. 1.65 1.45 2.40 1.45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6