SMTPA SERIES TRISIL FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 50 A, 10/1000 µs. SMB (JEDEC DO-214AA) DESCRIPTION The SMTPAxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. SCHEMATIC DIAGRAM Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Admissible Ipp (A) Necessary Resistor (Ω) (CCITT) ITU-K20 (CCITT) ITU-K17 1000 10/700 5/310 25 - 1500 10/700 5/310 38 - VDE0433 2000 2000 10/700 1.2/50 5/310 1/20 50 50 - level 3 level 4 10/700 1.2/50 5/310 8/20 50 100 - FCC Part 68, lightning surge type A 1500 800 10/160 10/560 10/160 10/560 75 55 12.5 6.5 FCC Part 68, lightning surge type B 1000 9/720 5/320 25 - BELLCORE TR-NWT-001089 First level 2500 1000 2/10 10/1000 2/10 10/1000 150 50 11.5 10 BELLCORE TR-NWT-001089 Second level 5000 2/10 2/10 150 11.5 CNET l31-24 1000 0.5/700 0.8/310 25 - COMPLIES WITH THE FOLLOWING STANDARDS: VDE0878 IEC-1000-4-5 October 1998 - Ed: 7A 1/5 SMTPA xxx ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter P IPP Power dissipation ITSM Non repetitive surge peak on-state current Critical rate of rise of off-state voltage Peak pulse current dV/dt Value Unit Tlead = 50 °C 10/1000 µs 8/20 µs tp = 20 ms 5 50 100 30 W A VRM 5 KV/µs - 55 to + 150 150 260 °C °C °C Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10 s. A THERMAL RESISTANCES Symbol Value Unit Rth (j-l) Junction to leads. Parameter 20 Rth (j-a) Junction to ambient on printed circuit with standard footprint dimensions. 100 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter VRM IRM Stand-off voltage VR Continuous Reverse voltage VBR VBO Breakdown voltage Breakover voltage Leakage current at stand-off voltage IH Holding current IBO IPP Breakover current Peak pulse current Capacitance C Type Marking IRM @ VRM max. Laser SMTPA62 SMTPA68 SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA240 SMTPA270 U01 U05 U13 U17 U19 U25 U27 U31 U35 U39 µA 2 2 2 2 2 2 2 2 2 2 IR @ VR max. note 1 VBO @ IBO V µA V max. note2 V 56 61 90 108 117 162 180 198 216 243 50 50 50 50 50 50 50 50 50 50 62 68 100 120 130 180 200 220 240 270 82 90 133 160 173 240 267 293 320 360 IH C max. note4 pF 150 150 100 100 100 100 100 100 100 100 max. mA min. note3 mA 800 800 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 150 150 All parameters tested at 25°C, except where indicated. Note 1: Note 2: 2/5 IR measured at VR guarantee VBRmin ≥ VR Measured at 50 Hz (1 cycle) - See test circuit 1. Note 3: Note 4: See test circuit 2. VR = 1V, F = 1MHz. Refer to fig.3 for C versus VR. SMTPA xxx TEST CIRCUIT 1 FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout IBO measure D.U.T V BO measure Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. TEST CIRCUIT 2 for IH parameter. R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 3/5 SMTPA xxx Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial=25°C). Fig. 2: Relative variation of holding current versus junction temperature. TSM (A) Fig. 3: Relative variation of junction capacitance versus reverse applied voltage (typical values). Note: For VRM upper than 56V, the curve is extrapolated (dotted line). Fig. 4: On-state current versus on-state voltage (typical values). IT(A) VR(V) Fig. 5: Transient thermal impedance junction to ambient versus pulse duration (for FR4 PC Board with T lead = 10 mm). tp(s) 4/5 VT(V) SMTPA xxx SM TPA 100 SURFACE MOUNT VOLTAGE TRISIL PROTECTION 50 A MARKING : Logo, date code, type code. PACKAGE MECHANICAL DATA. SMB (JEDEC DO-214AA) DIMENSIONS E1 REF. D E A1 A2 C L b FOOT PRINT DIMENSION (in millimeters) SMB Millimeters Inches A1 Min. 1.90 Max. 2.45 Min. 0.075 Max. 0.096 A2 0.05 0.20 0.002 0.008 b c 1.95 0.15 2.20 0.41 0.077 0.006 0.087 0.016 E 5.10 5.60 0.201 0.220 E1 D 4.05 3.30 4.60 3.95 0.159 0.130 0.181 0.156 L 0.75 1.60 0.030 0.063 Packaging : Standard packaging is in tape and reel Weight : 0.12g 2.3 1.52 2.75 1.52 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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