SOA06 SMALL SIGNAL NPN TRANSISTOR ■ ■ ■ ■ Type Marking SOA06 1GT SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION PNP COMPLEMENTS IS SOA56 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (IE = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Emitter-Base Voltage (I C = 0) 4 V IC Parameter Collector Current o P t ot Total Dissipation at T c = 25 C T stg St orage Temperature Tj March 1996 Max. Operating Junction Temperature 0.5 A 350 mW -65 to 150 o C 150 o C 1/4 SOA06 THERMAL DATA R t hj- amb • Thermal Resistance Junction-Ambient Max o 350 C/W • Mounted on a ceramic substrate area = 15 x 15 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CBO Collector Cut-off Current (IE = 0) V CB = 80 V 100 nA I CEO Collector Cut-off Current (IE = 0) V CE = 60 V 100 nA V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 1 mA 80 V 4 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 100 mA I B = 10 mA 0.25 V V BE(on) ∗ Base-Emitter O n Voltage I C = 100 mA V CE = 1 V 1.2 V hFE∗ DC Current G ain I C = 10 mA I C = 100 mA Transition F requency I C = 10 mA fT ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 V CE = 1 V V CE = 1 V V CE = 2 V f = 100 MHz 50 50 100 MHz SOA06 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 SOA06 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4