ST13007N ST13007NFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. 1 2 3 3 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ST13007N Uni t ST13007NF P V CEV Collector-Emitter Voltage (VBE = -1.5V) 700 V V CEO Collector-Emitter Voltage (IB = 0) 400 V V EBO Emitter-Base Voltage (IC = 0) 9 V IC I CM IB Collector Current Collector Peak Current Base Current I BM Base Peak Current P t ot Total Dissipation at Tc ≤ 25 C T stg Storage T emperature Tj March 1999 8 A 16 A 4 A 8 o Max. O perating Junction Temperature 80 A 33 W -65 to 150 o C 150 o C 1/7 ST13007N / ST13007NFP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-Ambient Max Max T O- 220 T O-220F P 1.56 62.5 3.8 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV I EBO Parameter V CE = rated V CEV V CE = rated V CEV Emitter Cut-off Current (I C = 0) V EB = 9 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ V BE(s at)∗ h F E∗ ts tf Test Cond ition s Collector Cut-off Current (V BE = -1.5V) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain INDUCTIVE LO AD Storage Time Fall Time Min. o Tc = 100 C I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A Typ . Max. Un it 1 5 mA mA 1 mA 400 IB IB IB IB = = = = 0.4 A 1 A 2 A 1 A V T c = 100 C 1 2 3 3 V V V V T c = 100 o C 1.2 1.6 1.5 V V V o IC = 2 A IC = 5 A IC = 5 A IB = 0.4 A IB = 1 A IB = 1 A IC = 2 A Group A Group B IC = 5 A VCE = 5 V IC = 5 A I B1 = 1 A R BB = 0 Ω V CL = 200 V V BEo ff = -5 V VCE = 5 V 15 26 5 28 40 30 0.6 60 1.5 110 µs ns * Pulsed: Pulse duration = 300 µs, duty cycle 2 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 2/7 ST13007N / ST13007NFP Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 ST13007N / ST13007NFP Inductive Fall Time Inductive Storage Time Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuits 1) F ast elect ronic switch 2) Non-inductive Resistor 3) F ast recovery rectifier 4/7 ST13007N / ST13007NFP TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/7 ST13007N / ST13007NFP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 6/7 L4 ST13007N / ST13007NFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 7/7