ST2310HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR MONITOR 15” AND HIGH END TV 3 2 1 ISOWATT218 DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 1500 V V CEO Collector-Emitter Voltage (IB = 0) 600 V V EBO Emitter-Base Voltage (IC = 0) 6 V Collector Current 10 A Collector Peak Current (tp < 5 ms) 20 A 7 A IC I CM IB Parameter Base Current P t ot Total Dissipation at Tc = 25 o C T stg St orage Temperature Tj Max. Operating Junction Temperature February 2000 55 W -65 to 150 o C 150 o C 1/6 ST2310HI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.3 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 1 mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA L = 25 mH 600 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 7 A IB = 1.75 A 3 V V BE(s at)∗ Base-Emitt er Saturation Voltage IC = 7 A IB = 1.75 A 1.1 V DC Current Gain IC = 1 A IC = 7 A V CE = 5 V V CE = 5 V h F E∗ ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 6 A I B(o n) = 1.2 A L B = 0.4 µH 25 6.5 fh = 64 KHz V BB(off ) = -2.5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/6 Thermal Impedance 9.5 2.3 380 2.7 450 µs ns ST2310HI Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses Switching Time Inductive Load 3/6 ST2310HI Reverse Biased SOA 4/6 ST2310HI ISOWATT218 NARROW LEADS MECHANICAL DATA DIM. A C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 mm TYP. 10.80 15.80 MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.70 2.10 1.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.030 0.059 0.075 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 0.425 0.622 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.037 0.067 0.083 0.043 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/B 5/6 ST2310HI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6