STMICROELECTRONICS ST2317DFX

ST2317DFX
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
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NEW SERIES, ENHANCED PERFORMANCE
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
VERY HIGH VOLTAGE CAPABILITY
( > 1700 V)
INTEGRATED FREE WHEELING DIODE
HIGH SWITCHING SPEED
TIGTHER hFE CONTROL
IMPROVED RUGGEDNESS
APPLICATIONS:
HORIZONTAL DEFLECTION FOR
LARGE / FLAT SCREEN COLOUR TV
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DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ISOWATT218FX
INTERNAL SCHEMATIC DIAGRAM
RBE =32 Ω
Typ.
ABSOLUTE MAXIMUM RATINGS
Symbol
V CES
V CEO
V EBO
IC
I CM
IB
P tot
V isol
T stg
Tj
Parameter
Collector-Base Voltage (V BE = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p < 5 ms)
Base Current
Total Dissipation at T C = 25 o C
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
December 2003
Value
1700
600
7
10
20
7
70
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
o
o
C
C
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ST2317DFX
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
1.8
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1700 V
V CE = 1700 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 4 V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 800 mA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 6 A
I B = 1.2 A
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 6 A
I B = 1.2 A
0.9
DC Current Gain
IC = 1 A
IC = 6 A
IC = 6 A
V CE = 5 V
V CE = 1.5 V
V CE = 5 V
20
6
h FE ∗
C COB
85
Unit
0.5
1
mA
mA
205
mA
7
Collector-Output
Capacitance
IE = 0
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
I C = 6 A f = 16 KHz V CC = 135 V
L = 480 µH
V (flyback) = 1050 V
L BB(off) = 2.3 µH
C sn = 25 nF
V BB(off) = -2.7 V δ = 60%
fT
Transition Frequency
V CE = 10 V
Vf
Diode Forward Voltage I F = 8 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/5
T j = 125 o C
Max.
V CB = 10 V
I C = 0.1 A
5
V
1.2
V
10
6
f = 1 MHz
f = 1 MHz
V
180
2.5
0.3
3
pF
4.5
0.7
2
1.6
µs
µs
MHz
2.0
V
ST2317DFX
Figure 1: Inductive Load Switching Test Circuit.
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ST2317DFX
ISOWATT218FX MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
G
G1
H
L
L2
L3
L4
L5
L6
L7
N
R
DIA
MIN.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
mm
TYP.
MAX.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
MIN.
0.209
0.110
0.122
0.071
0.031
0.026
0.071
0.406
15.70
10.20
23.20
26.70
44.40
4.70
24.70
15.00
2.20
4.20
3.80
0.602
0.386
0.898
1.035
1.701
0.169
0.957
0.575
0.071
0.150
0.134
5.45
15.30
9.80
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
inch
TYP.
0.215
- Weight : 5.6 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.55 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
4/5
MAX.
0.224
0.126
0.138
0.087
0.043
0.037
0.087
0.453
0.618
0.402
0.913
1.051
1.748
0.185
0.972
0.591
0.087
0.165
0.150
ST2317DFX
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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