VS-20ETF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level Base cathode 2 APPLICATIONS TO-220AC 1 Cathode • Output rectification and freewheeling in inverters, choppers and converters • Input rectifications where severe restrictions on conducted EMI should be met 3 Anode PRODUCT SUMMARY DESCRIPTION VF at 20 A < 1.31 V IFSM 355 A VRRM 800 to 1200 V The VS-20ETF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) Sinusoidal waveform IFSM VALUES UNITS 800 to 1200 V 20 A 355 trr 1 A, 100 A/μs VF 20 A, TJ = 25 °C TJ Range 95 ns 1.31 V - 40 to 150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-20ETF08PbF 800 900 VS-20ETF10PbF 1000 1100 VS-20ETF12PbF 1200 1300 IRRM AT 150 °C mA 6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t Document Number: 94098 Revision: 27-Apr-10 TEST CONDITIONS VALUES TC = 97 °C, 180° conduction half sine wave 20 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 355 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 635 t = 0.1 ms to 10 ms, no voltage reapplied 6350 For technical questions, contact: [email protected] UNITS A A2s A2√s www.vishay.com 1 VS-20ETF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.31 V 11.88 mΩ 0.93 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 6 RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time trr IF at 20 Apk 400 ns Reverse recovery current Irr 6.1 A Qrr 25 A/μs 25 °C S Typical 0.6 Reverse recovery charge Snap factor 1.7 IFM trr ta tb t dir dt μC Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device www.vishay.com 2 UNITS - 40 to 150 °C 0.9 62 Mounting surface, smooth and greased °C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220AC For technical questions, contact: [email protected] 20ETF08 Document Number: 94098 Revision: 27-Apr-10 VS-20ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 35 20ETF.. Series RthJC (DC) = 0.9 K/W Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 140 130 Ø Conduction angle 120 30° 60° 110 90° 120° 180° 5 0 15 10 20 25 20 RMS limit 15 Ø 10 Conduction period 5 20ETF.. Series TJ = 150 °C 25 0 5 10 15 20 25 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 350 150 20ETF.. Series RthJC (DC) = 0.9 K/W Ø Conduction period 130 120 60° 110 30° 90° 120° At any rated load condition and with rated VRRM applied following surge. 300 140 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 180° 120° 90° 60° 30° 30 0 100 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 250 200 150 100 20ETF.. Series DC 180° 50 100 0 5 10 15 20 30 25 35 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 400 35 180° 120° 90° 60° 30° 30 25 20 350 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Vishay High Power Products RMS limit 15 Ø 10 Conduction angle 5 10 15 20 250 200 150 20ETF.. Series 0 5 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 300 100 20ETF.. Series TJ = 150 °C 0 Maximum non-repetitive surge current versus pulse train duration. 25 50 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94098 Revision: 27-Apr-10 For technical questions, contact: [email protected] www.vishay.com 3 VS-20ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 6 1000 Qrr - Maximum Reverse Recovery Charge (µC) Instantaneous Forward Current (A) Vishay High Power Products 100 TJ = 25 °C TJ = 150 °C 10 5 IFM = 20 A 4 3 IFM = 10 A 2 IFM = 5 A 1 IFM = 1 A 20ETF.. Series 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 50 100 150 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.5 Qrr - Maximum Reverse Recovery Charge (µC) 10 20ETF.. Series TJ = 25 °C 0.6 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.4 0.3 0.2 IFM = 30 A 20ETF.. Series TJ = 150 °C 8 IFM = 20 A 6 IFM = 10 A 4 IFM = 5 A 2 IFM = 1 A 0.1 0 0 0 50 100 150 0 200 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 1.2 25 20ETF.. Series TJ = 150 °C Irr - Maximum Reverse Recovery Current (A) trr - Maximum Reverse Recovery Time (µs) 200 Instantaneous Forward Voltage (V) 0.7 trr - Maximum Reverse Recovery Time (µs) IFM = 30 A 20ETF.. Series TJ = 25 °C 0.9 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.6 0.3 0 20ETF.. Series TJ = 25 °C 20 IFM = 30 A IFM = 20 A IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 50 100 150 200 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94098 Revision: 27-Apr-10 VS-20ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Vishay High Power Products 35 20ETF.. Series TJ = 150 °C Irr - Maximum Reverse Recovery Current (A) 30 IFM = 30 A 25 IFM = 20 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (K/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 0.01 20ETF.. Series 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94098 Revision: 27-Apr-10 For technical questions, contact: [email protected] www.vishay.com 5 VS-20ETF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Vishay High Power Products ORDERING INFORMATION TABLE Device code VS- 20 E T F 12 PbF 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (20 = 20 A) 3 - Circuit configuration: 4 - E = Single diode Package: T = TO-220AC 5 - Type of silicon: F = Fast soft recovery rectifier 6 - Voltage ratings 7 - PbF = Lead (Pb)-free 08 = 800 V 10 = 1000 V 12 = 1200 V LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95221 Part marking information www.vishay.com/doc?95224 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94098 Revision: 27-Apr-10 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1