VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES VSMG2000X01 • • • • • • • • • • • • • • • Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 12° Low forward voltage Suitable for high pulse current operation Terminal configurations: gullwing or reserve gullwing Package matches with detector VEMD2000X01 series Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications VSMG2020X01 21725-2 DESCRIPTION VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • IrDA compatible data transmission • IR-illumination (CCTV) • Miniature light barrier • • • • Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMG2000X01 40 ± 12 850 20 VSMG2020X01 40 ± 12 850 20 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG2000X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMG2020X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage VR 5 V Forward current IF 100 mA Document Number: 85194 Rev. 1.0, 28-Jan-10 TEST CONDITION For technical questions, contact: [email protected] UNIT www.vishay.com 1 VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 1 A PV 170 mW Power dissipation Junction temperature Operating temperature range Tj 100 °C Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature Acc. figure 9, J-STD-020 Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W Note Tamb = 25 °C, unless otherwise specified 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21341 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 0 21342 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.25 1.45 1.7 V IF = 1 A, tp = 100 µs VF 2.3 V IF = 1 mA TKVF - 1.8 mV/K IF = 100 mA TKVF - 1.1 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ IF = 100 mA, tp = 20 ms Ie 10 µA 60 mW/sr 125 20 40 pF IF = 1 A, tp = 100 µs Ie 350 IF = 100 mA, tp = 20 ms φe 40 mW IF = 100 mA TKφe - 0.35 %/K Peak wavelength IF = 30 mA λp Spectral bandwidth IF = 30 mA Δλ 35 nm Temperature coefficient of λp IF = 30 mA TKλp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 20 ns Fall time IF = 100 mA, 20 % to 80 % tf 20 ns IDC = 70 mA, IAC = 30 mA pp fc 23 MHz d 1.5 mm Radiant power Temperature coefficient of φe ϕ Angle of half intensity Cut-off frequency Virtual source diameter mW/sr ± 12 830 850 deg 870 nm Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 85194 Rev. 1.0, 28-Jan-10 VSMG2000X01, VSMG2020X01 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, GaAlAs, DH BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.25 Φe, rel - Relative Radiant Power 100 tp = 100 µs tp/T = 0.001 10 1.0 0.75 0.5 0.25 0 1 0 1 2 3 VF - Forward Voltage (V) 18873_1 800 4 850 Fig. 6 - Relative Radiant Power vs. Wavelength Fig. 3 - Forward Current vs. Forward Voltage 0° 110 10° 20° 30° 108 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 Ie rel - Relative Radiant Intensity VF, rel - Relative Forward Voltage (%) 900 λ- Wavelength (nm) 16972 40° 1.0 50° 0.9 60° 0.8 70° ϕ - Angular Displacement IF - Forward Current (mA) 1000 80° 0.7 90 - 40 - 20 0 20 40 60 80 100 0.6 0.4 0.2 0 21550 Tamb - Ambient Temperature (°C) 21443 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Angular Displacement Ie - Radiant Intensity (mW/sr) 1000 tp = 100 µs tp/T= 0.001 100 10 1 10 21487 100 1000 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 85194 Rev. 1.0, 28-Jan-10 For technical questions, contact: [email protected] www.vishay.com 3 VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 DRYING 0 0 50 100 19841 150 200 250 300 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS in millimeters: VSMG2000 Ø 1.8 ± 0.1 0.3 0.05 ± 0.1 0.4 1.6 0.19 2.77 ± 0.2 Z 2.2 2.2 5.8 ± 0.2 exposed copper Z 20:1 1.1 ± 0.1 0.254 2.3 ± 0.2 0.4 0.5 2.3 ± 0.2 Anode Cathode Pin ID 1.7 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1 6.7 Drawing-No.: 6.544-5391.02-4 Issue: 1; 26.09.08 21517 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 85194 Rev. 1.0, 28-Jan-10 VSMG2000X01, VSMG2020X01 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, GaAlAs, DH PACKAGE DIMENSIONS in millimeters: VSMG2020 Ø 1.8 2.77 ± 0.2 0.3 0.4 0.19 0.05 1.6 X 2.2 2.2 4.2 ± 0.2 X 20:1 exposed copper 0.6 Cathode 0.254 2.3 ± 0.2 0.4 0.5 2.3 ± 0.2 Anode Pin ID technical drawings according to DIN specifications 0.75 Solder pad proposal acc. IPC 7351 Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.02-4 Issue: 3; 26.09.08 21488 Document Number: 85194 Rev. 1.0, 28-Jan-10 For technical questions, contact: [email protected] www.vishay.com 5 VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH TAPING AND REEL DIMENSIONS in millimeters: VSMG2000 Unreel direction X 2. Ø 62 ± 0.5 Reel Ø 13 ± 0.5 Ø 330 ± 1 0.5 5± Tape position coming out from reel 6000 pcs/reel Label posted here Technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Device Lead I Lead II Collector Emitter Cathode Anode I 4 ± 0.1 2 ± 0.05 X 2:1 VEMT2000 5.5 ± 0.05 VEMT2500 VEMD2000 VSMB2000 3.05 ± 0.1 II 12 ± 0.3 Ø 1.55 ± 0.05 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: X; 29.04.09 21572 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 85194 Rev. 1.0, 28-Jan-10 VSMG2000X01, VSMG2020X01 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, GaAlAs, DH TAPING AND REEL DIMENSIONS in millimeters: VSMG2020 Reel X Unreel direction 5± Ø 62 ± 0.5 2. Ø 13 ± 0.5 Ø 330 ± 1 0.5 Tape position coming out from reel 6000 pcs/reel technical drawings according to DIN specifications Label posted here 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Terminal position in tape Device Lead I Lead II Collector Emitter Cathode Anode Ø 1.55 ± 0.05 I 4 ± 0.1 2 ± 0.05 X 2:1 1.75 ± 0.1 Empty (400 mm min.) VSMB2020 VEMD2020 3.05 ± 0.1 II Drawing-No.: 4 ± 0.1 5.5 ± 0.05 VEMT2520 12 ± 0.3 VEMT2020 9.800-5091.01-4 Issue: X; 29.04.09 21571 Document Number: 85194 Rev. 1.0, 28-Jan-10 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. 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