START540
NPN Silicon RF Transistor
• LOW NOISE FIGURE: NFmin = 0.9dB
@ 1.8GHz, 5mA, 2V
• HIGH OUTPUT IP3 = 24dBm
@ 1.8GHz, 20mA, 2V
• GOOD RUGGEDNESS BVceo = 4.5V
• TRANSITION FREQUENCY 45GHz
• ULTRA MINIATURE SOT343 PACKAGE
SOT343 (SC70)
ORDER CODE
START540TR
DESCRIPTION
The START540 is a member of the START family
that provide the market with the state of the art of RF
silicon process. Manufacturated in the third
generation of ST proprietary bipolar process, it
offers the highest linearity with excellent Noise
Figure for 4.5V breakdown voltage(BVceo).
It reaches performance level only achieved with
GaAs products before.
BRANDING
540
APPLICATIONS
• LNA FOR GSM/DCS, DECT, PDC, PCS,
PCN, CDMA, W-CDMA
• GENERAL PURPOSE 500MHz-5GHz
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Vceo
Collector emitter voltage
Parameter
4.5
V
Vcbo
Collector base voltage
15
V
Vebo
Emitter base voltage
1.5
V
Ic
Collector current
40
mA
Ib
Base current
Ptot
Total dissipation, Ts = 101
Tstg
Storage temperature
Tj
Max. operating junction temperature
4
mA
180
mW
-65 to 150
oC
150
oC
ABSOLUTE MAXIMUM RATINGS
Rthjs
July, 3 2002
Thermal Resistance Junction soldering point
270
oC/W
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START540
ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified)
Symbol
Parameter
Test Conditions
Icbo
Collector cutoff current
Iebo
Emitter-base cutoff
current
Hfe
DC current gain
Ic = 20mA, Vce = 3V
NFmin
Minimim noise figure
Ic = 5mA, Vce = 2V, f = 1.8GHz,
Zs = Zsopt
0.9
dB
Ga
NFmin associated gain
Ic = 5mA, Vce = 2V, f = 1.8GHz
16
dB
Insertion power gain
Ic = 20mA, Vce = 2V, f = 1.8GHz
19.5
dB
|S21|2
(1)
Min.
Max.
Unit
Vcb = 5V, Ie = 0A
150
nA
Veb = 1.5V, Ic = 0A
15
µA
100
Typ.
160
Maximum stable gain
Ic = 20mA, Vce = 2V, f = 1.8GHz
22.7
dB
P-1dB
1dB compression point
Ic = 20mA,Vce = 2V, f = 1.8GHz
13
dBm
OIP3
Ouput third order
intercept point
Ic = 20mA,Vce = 2V, f = 1.8GHz
24
dBm
Gms
Note(1): Gms = | S 21 / S12 |
PINOUT
4
PIN CONNECTION
3
Top view
1
2
SOT343
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Pin No.
Description
1
BASE
3
COLLECTOR
2,4
EMITTER
START540
COMMON EMITTER S-PARAMETERS ( V CE = 2V, IC = 20mA )
S11
f
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1
0.699
-21.6
42.32
164.0
0.009
88.9
0.942
-12.2
0.5
0.545
-89.7
27.82
119.9
0.027
58.1
0.642
-50.6
0.9
0.480
-130.0
18.42
98.1
0.036
48.1
0.431
-70.6
1
0.476
-137.4
16.86
94.0
0.038
47.2
0.397
-74.7
1.5
0.483
-166.9
11.63
76.9
0.048
41.6
0.272
-96.2
1.8
0.494
179.6
9.63
68.2
0.052
38.8
0.220
-110.7
2
0.503
172.2
8.49
63.1
0.055
36.7
0.193
-123.3
2.5
0.513
157.6
6.46
53.6
0.061
31.7
0.148
-154.4
3
0.533
147.8
5.34
45.9
0.069
26.7
0.142
-171.4
3.5
0.551
139.6
4.54
36.6
0.077
21.2
0.153
177.9
4
0.559
133.8
3.87
28.3
0.085
13.7
0.154
162.7
COMMON EMITTER S-PARAMETERS ( V CE = 2V, IC = 5mA )
S11
f
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.5
0.816
-50.5
14.56
140.8
0.038
65.8
0.879
-30.3
0.9
0.715
-84.6
11.92
118.2
0.058
48.4
0.720
-49.0
1
0.695
-92.5
11.32
113.2
0.061
45.0
0.685
-53.1
1.5
0.620
-128.0
8.64
91.5
0.075
30.9
0.515
-71.9
1.8
0.589
-145.6
7.39
80.9
0.080
23.8
0.425
-81.8
2
0.581
-156.1
6.66
74.5
0.080
19.3
0.374
-88.4
2.5
0.570
-167.6
5.87
8.0
0.082
14.8
0.316
-96.8
3
0.572
167.6
4.37
51.7
0.085
5.7
0.225
-166.8
3.5
0.585
155.3
3.74
40.4
0.090
1.1
0.208
-128.4
4
0.592
146.1
3.20
30.6
0.094
-5.0
0.184
-141.2
COMMON EMITTER NOISE-PARAMETERS ( VCE = 2V, IC = 5mA )
f
Fmin
GHz
dB
Γopt
MAG
ANG
Rn
rn
|S21|2
F50
Ω
-
dB
dB
1.8
0.91
0.39
100.8
6.4
0.128
17.38
1.12
2
0.96
0.48
115.2
6.38
0.127
16.47
1.22
2.5
1.01
0.48
136.8
5.94
0.118
14.35
1.34
1.38
3
1.14
0.46
163
5.6
0.112
12.82
3.5
1.3
0.39
-160
5.2
0.104
11.46
1.42
4
1.4
0.32
-122.4
5
0.1
10.12
1.66
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START540
SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax)
TRANSISTOR CHIP DATA
Symbol
Value
Symbol
Value
Symbol
Value
TMEAS
27.0
FC
0.66
XJBC
0.53
IS
1.00E-16
EG
1.12
XTI
3.76
ISE
1.58E-11
NF
1
BF
320
NR
1
NE
3.27
VAF
70
ISC
1.55E-15
BR
9.52
VAR
2.3
IKF
{0.217*((T(oC)+273.15)/
300.15)^(-1.63)}
NC
1.495
TF
3.0E-12
TR
7E-10
PTF
32.0
VTF
27.9
XTF
9.84
ITF
0.498
MJE
0.497
RB
10.8
RBM
2.94
MJC
0.292
RC
3.77
RE
0.42
MJS
0.245
CJE
421E-15
VJE
1.03
IKR
8.32E-3
CJC
160E-15
VJC
0.6
XTB
-0.54
CJS
112E-15
VJS
0.4
PACKAGE EQUIVALENT CIRCUIT
C2
C=66 fF
B
.
L4
L=0.6 nH
.
L3
B’
L=0.35 nH
Transistor
Chip
C’
L5
L=0.3 nH
.
L6
L=0.6 nH
.
C
E’
L=0.1 nH
L1
.
C1
C=436 fF
L2
C3
C=334 fF
L=0.05 nH
.
E
In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343
package are combined in one electrical connection.
FOR MORE ACCURACY SIMULATION IN SATURATION REGION :
Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you
can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with
following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version
2001 only).
Table A Table A (Spice Parameters extracted in saturation region)
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RW
Vjj
ENP
VRP
RP
1.173
0.8
2.085
{4.12*((TEMPER+273.15)/300.15)^(0.303)}
1.00E-6
START540
TAPE & REEL DIMENSIONS
mm
MIN.
TYP.
MAX
A
178.5
179
179.5
C
12.8
13.0
13.5
D
20.2
N
54.5
55
55.5
T
14.4
Ao
2.25
Bo
2.7
Ko
1.2
Po
3.8 (cumulative 10 Po)
P
4.0
4.2 (cumulative 10 Po)
4.0
DEVICE ORIENTATION
TOP VIEW
540
540
540
END VIEW
540
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START540
PACKAGE DIMENSIONS SOT343 (SC-70 4 leads)
1.30
1.15-1.35
2.00-2.20
1.15
0.55-0.65
1.90-2.10
1.15-1.35
0.80-1.00
0.25-0.35
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0.00-0.10
0.45
0.10-0.20
START540
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics - All Rights Reserved
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