STMICROELECTRONICS STB4NB50

STB4NB50
®
N - CHANNEL 500V - 2.5Ω - 3.8A - D2PAK/I2PAK
PowerMESH MOSFET
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
ID
STB4NB50
500 V
< 2.8 Ω
3.8 A
■
■
■
■
■
TYPICAL RDS(on) = 2.5 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
3
12
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
I2PAK
TO-262
(suffix "-1")
D2PAK
TO-263
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
500
V
Drain- gate Voltage (R GS = 20 kΩ)
500
V
± 30
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
3.8
A
ID
Drain Current (continuous) at T c = 100 o C
2.4
A
15.2
A
80
W
0.64
W/ o C
4.5
V/ns
I DM (•)
P tot
Drain Current (pulsed)
o
Total Dissipation at T c = 25 C
Derating Factor
dv/dt( 1 )
Tstg
Tj
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
-65 to 150
o
C
150
o
C
( 1) ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STB4NB50
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
1.56
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
Max Value
Unit
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
3.8
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 50 V)
220
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
500
V GS = 0
I DSS
Min.
Unit
V
T c = 125 o C
V GS = ± 30 V
1
50
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold
Voltage
V DS = V GS
I D = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
I D = 1.9 A
I D(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Min.
Typ.
Max.
Unit
3
4
5
V
2.5
2.8
Ω
3.8
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/8
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 1.9 A
V GS = 0
Min.
Typ.
1.2
2.3
400
62
7.5
Max.
Unit
S
520
81
10
pF
pF
pF
STB4NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 250 V
R G = 4.7 Ω
ID = 1.9 A
VGS = 10 V
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
ID = 3.8 A V GS = 10 V
Min.
Typ.
Max.
Unit
11
8
17
12
ns
ns
14.5
6.5
5
22
nC
nC
nC
Typ.
Max.
Unit
8
5
14
12
9
20
ns
ns
ns
Typ.
Max.
Unit
3.8
15.2
A
A
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 400 V ID = 3.8 A
R G = 4.7 Ω V GS = 10 V
SOURCE DRAIN DIODE
Symbol
ISD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD = 5.8 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 3.8 A di/dt = 100 A/µs
V DD = 100 V
T j = 150 o C
V GS = 0
1.6
V
245
ns
980
µC
8
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/8
STB4NB50
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B1
1.2
1.38
0.047
0.054
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
e
2.44
2.64
0.096
0.104
E
10
10.28
0.393
0.404
L
13.2
13.5
0.519
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/C
4/8
STB4NB50
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.28
0.393
0.404
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
5/8
STB4NB50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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