STB5NB80 N - CHANNEL 800V - 1.8Ω - 5A - D2PAK PowerMESH MOSFET TYPE ST B5NB80 ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 800 V < 2.2 Ω 5 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ DC-AC CONVERTERS FOR WELDING ■ EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS Parameter Value Unit Drain-source Voltage (VGS = 0) 800 V Drain- gate Voltage (RGS = 20 kΩ) 800 V ± 30 V 5 A 3.2 A G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C ID Drain Current (continuous) at Tc = 100 C I DM (•) P tot dv/dt( 1) T s tg Tj o 20 A T otal Dissipation at T c = 25 oC Drain Current (pulsed) 110 W Derating F actor 0.88 W/ C 4 V/ns Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction T emperature (*) Limited only by maximum temperature allowed March 1999 o -65 to 150 o C 150 o C ( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/8 STB5NB80 THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.13 o C/W 62.5 0.5 300 o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Parameter Min. Value IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Max. Value Unit 5 A 300 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) T yp. Max. 800 V GS = 0 I DSS Min. Unit V T c = 125 oC V GS = ± 30 V 1 50 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source O n V GS = 10V Resistance I D(o n) V DS = V GS Min. T yp. Max. Unit 3 4 5 V 1.8 2.2 Ω ID = 2.5 A 5 On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/8 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D = 2.5 A V GS = 0 Min. T yp. 1.5 4 Max. Unit S 1050 135 15 pF pF pF STB5NB80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. T yp. Max. Unit t d(on) tr Turn-on delay Time Rise Time V DD = 400 V ID = 3 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 3) 18 9 Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V 30 9 14 42 nC nC nC T yp. Max. Unit I D = 5.6 A V GS = 10 V ns ns SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions Min. 14 14 21 V DD = 640 V ID = 5.6 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Con ditions Min. T yp. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 5 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5.6 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V (see test circuit, figure 5) V GS = 0 Max. Unit 5 20 A A 1.6 V 700 ns 5 µC 14 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STB5NB80 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB5NB80 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB5NB80 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB5NB80 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G P011P6/C 7/8 STB5NB80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 8/8 http://www.st.com .