STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB60N06-14 ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 60 V < 0.014 Ω 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 12 I2PAK TO-262 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ■ 3 1 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 60 A ID Drain Current (continuous) at T c = 100 o C 50 A 240 A I DM (•) P tot Drain Current (pulsed) o Total Dissipation at T c = 25 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature 150 W 1 W/ o C -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area March 1996 1/6 STB60N06-14 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 1 62.5 0.5 300 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit 60 A I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 25 V) 600 mJ EAR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 150 mJ I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 50 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 I GSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 60 Unit V T c = 125 o C V GS = ± 20 V 250 1000 µA µA 100 nA Max. Unit ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS R DS(on) Static Drain-source On Resistance ID(on) ID = 250 µA V GS = 10 V V GS = 10 V I D = 30 A I D = 30 A Min. 2 Typ. 3 4 V 0.012 0.014 0.028 Ω Ω T c = 100 o C On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 60 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/6 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max I D = 30 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz Min. Typ. 20 30 3900 950 250 Max. Unit S 4800 1200 320 pF pF pF STB60N06-14 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 25 V R G = 4.7 Ω Test Conditions I D = 30 A V GS = 10 V 30 180 50 250 ns ns Turn-on Current Slope V DD = 40 V R G = 47 Ω I D = 60 A V GS = 10 V 210 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V V GS = 10 V 130 26 55 170 nC nC nC Typ. Max. Unit 35 135 180 50 190 250 ns ns ns Typ. Max. Unit 60 240 A A 1.6 V I D = 60 A Min. A/µs SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 40 V R G = 4.7 Ω Min. I D = 60 A V GS = 10 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 60 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A V DD = 30 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o T j = 150 C 150 ns 0.56 µC 9 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STB60N06-14 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B1 1.2 1.38 0.047 0.054 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 E 10 10.28 0.393 0.404 L 13.2 13.5 0.519 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.37 0.050 0.054 E e B B2 C2 A1 A C A L1 L2 4/6 MAX. D L STB60N06-14 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.37 0.050 0.054 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G 5/6 STB60N06-14 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6