STB60NE06-16 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE STB60NE06-1 ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 60 V < 0.016 Ω 60 A TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 D2PAK TO-263 (Suffix ”T4”) DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol V DS Parameter Value Uni t Drain-source Voltage (V GS = 0) 60 V VDGR Drain- gate Voltage (R GS = 20 kΩ) 60 V V GS Gate-source Voltage ± 20 V 60 A Drain Current (continuous) at T c = 100 C 42 A Drain Current (pulsed) 240 A 150 W 1 W/ o C 6 V/ ns o ID Drain Current (continuous) at T c = 25 C ID o I DM (•) P t ot o Total Dissipation at Tc = 25 C Derating Factor dV/dt( 1 ) T stg Tj Peak Diode Recovery voltage slope St orage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area January 1998 -65 to 175 o C 175 o C (1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX 1/9 STB60NE06-16 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 1 62.5 0.5 300 C/W C/W oC/W o C o AVALANCHE CHARACTERISTICS Symb ol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 25 V) Max Valu e Unit 60 A 350 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Gate-body Leakage Current (V DS = 0) Typ . Max. 60 V GS = 0 V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating o C Min. Un it V T c = 125 V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate Threshold Voltage R DS( on) Static Drain-source On V GS = 10V Resistance ID(o n) V DS = VGS Min. Typ . Max. Un it 2 3 4 V 0.013 0.016 Ω ID = 30 A 60 On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/9 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D =30 A VGS = 0 Min. Typ . 20 35 4600 580 140 Max. Un it S 6200 800 200 pF pF pF STB60NE06-16 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Cond ition s Turn-on Time Rise Time V DD = 30 V R G =4.7 Ω Turn-on Current Slope V DD = 48 V R G = 47 Ω I D = 60 A VGS =10 V Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V I D = 60 A Min. ID = 30 A VGS = 10 V Typ . Max. Un it 40 125 60 180 ns ns 280 V GS = 10 V A/µs 115 25 40 160 nC nC nC Typ . Max. Un it 15 150 180 25 210 260 ns ns ns Typ . Max. Un it 60 240 A A SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s Min. V DD = 48 V I D = 60 A R G =4.7 Ω VGS = 10 V SOURCE DRAIN DIODE Symb ol I SD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Cond ition s Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 60 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A V DD = 30 V V GS = 0 di/dt = 100 A/µs o Tj = 150 C 1.5 V 100 ns 0.4 µC 8 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STB60NE06-16 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STB60NE06-16 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STB60NE06-16 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit 6/9 Fig. 2: Unclamped Inductive Waveform STB60NE06-16 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/9 STB60NE06-16 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G P011P6/C 8/9 STB60NE06-16 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9