STMICROELECTRONICS STB7101TR

STB7101
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER
• OPERATING FREQUENCY 900-1900MHz
• OUTPUT POWER 9.8dBm typ. @ 900MHz
7.5dBm typ. @ 1900MHz
• POWER GAIN GP = 20.3dB typ. @ 900MHz
GP = 20.5dB typ. @ 1900MHz
SOT323-6L (SC70)
ORDER CODE
STB7101
BRANDING
101
APPLICATIONS
PA driver for cellular applications
(Top View)
1
101
2
DESCRIPTION
The STB7101, designed for cellular applications
(0.9/1.9GHz), uses a 20 GHz FT silicon bipolar
process. This IC is a wide range amplifier operating
from 900MHz to 1900MHz, in the overall
frequencies range the gain flatness is less than 1
dB. The STB7101 is housed in a very small SMD
package SOT323-6L.
3
(Bottom View)
6
6
1
5
5
2
4
4
3
PIN CONNECTION
Pin No.
Pin Name
1
GND
2
GND
3
INPUT
4
VCC
5
GND
6
OUTPUT
ABSOLUTE MAXIMUM RATINGS
Symbol
Vcc
Parameter
Supply voltage
Conditions
Ta =
+25 oC,
pin 4 and 6
Value
4.5
Unit
V
Storage temperature
-55 to +150
o
Ta
Operating ambient temperature
-40 to +85
o
Pin
Input power
Tstg
January, 22 2002
Ta= +25 oC
10
C
C
dBm
1/5
STB7101
ELECTRICAL CHARACTERISTICS (Ta = +25oC, V cc = 2.75V, ZL = Zs = 50Ω, unless otherwise specified)
Symbol
Parameter
Vcc
Supply voltage
Test Conditions
Min.
Typ.
Max.
Unit
2.6
2.75
3.3
V
Icc
Circuit current
No signal
28
mA
Gp
Power Gain
f = 0.9GHz
f = 1.9GHz
20.3
20.5
dB
NF
Noise figure
f = 0.9GHz
f = 1.9GHz
5
4.5
dB
P1dB
Output 1dB Compr.
Power
f = 0.9GHz
f = 1.9GHz
9.8
7.5
dBm
RLIN
Input return loss
f = 0.9GHz
f = 1.9GHz
8
6.2
dB
RLOUT
Output Return loss
f = 0.9GHz
f = 1.9GHz
9.7
9.7
dB
S12
Isolation
f = 0.9GHz
f = 1.9GHz
-34
-33
dB
Po(Sat)
Saturated output power
level
f = 0.9GHz
f = 1.9GHz
11.3
9.7
dBm
OIP3
Output Third Order
Intercept
f = 0.9GHz
f = 1.9GHz
16.5
14.9
dBm
TYPICAL EVALUATION CIRCUIT
1
J1
2
C1
27p
RF IN
3
U1
GND OUTPUT
GND
INPUT
GND
Vcc
C2
6
5
4
STB7101
C1 = C2 = C3 = 27pF
C4 = 10nF
L1 = 15nH
L2 = 33nH
2/5
RF OUT
L1
15n
L2 33 n
C3
27p
Evaluation circuit components
J2
27p
VCC (+2.75V)
C4
10n
STB7101
TYPICAL PERFORMANCE (Ta = +25 oC, Vcc = 2.75V, unless otherwise specified)
Circuit Current versus Supply Voltage
Insertion Power Gain versus Frequency
24
35
22
Insertion Power Gain (dB)
40
30
Icc (mA)
25
20
15
10
5
20
18
16
14
12
10
0
8
-5
0
0.5
1
1.5
2
2.5
3
6
800
3.5
1000
1200
Vcc (V)
Isolation versus Frequency
1600
1800
2000
Noise Figure versus Frequency
7
0
-10
6
NF (dB)
Isolation (dB)
1400
Frequency (MHz)
-20
5
-30
4
-40
-50
800
1000
1200
1400
1600
1800
3
800
2000
1000
24
24
22
22
20
20
18
16
14
12
12
8
6
0
2
4
2000
14
8
-2
1800
16
10
-4
1600
18
10
-6
1400
Power Gain versus Output Power @ 1900 MHz
Power Gain (dB)
Power Gain (dB)
Power Gain versus Output Power @ 900 MHz
-10 -8
1200
Frequency (MHz)
Frequency (MHz)
6
Output Power (dBm)
8
10
12
6
-10
-8
-6
-4
-2
0
2
4
6
8
10
Output Power (dBm)
3/5
STB7101
SOT323-6L MECHANICAL DATA
mm
DIM.
MIN.
A
MAX
MIN.
0.8
1.1
0.031
0.043
A1
0
0.1
0
0.004
A2
0.8
1
0.0031
0.039
b
0.15
0.3
0.006
0.012
c
0.1
0.18
0.004
0.007
D
1.8
2.2
0.071
0.088
E
1.15
1.35
0.045
0.59
e
4/5
TYP.
Inch
0.65
TYP.
MAX
0.025
H
1.8
2.4
0.071
0.094
Q
0.1
0.4
0.004
0.016
STB7101
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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