STB8NC50 N-CHANNEL 500V - 0.7Ω - 8A D2PAK PowerMesh™II MOSFET ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STB8NC50 500V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Value Unit 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 8 A ID Drain Current (continuos) at TC = 100°C 5.4 A IDM (●) PTOT Drain Current (pulsed) 32 A Total Dissipation at TC = 25°C 135 W 1 W/°C Derating Factor dv/dt(1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 3 V/ns –65 to 150 °C 150 °C (•)Pulse width limited by safe operating area (1)ISD ≤8A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX. November 2001 1/9 STB8NC50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.93 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 8 A 600 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 500 Unit V VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA ±100 nA VGS = ±30V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 4 A Min. Typ. Max. Unit 2 3 4 V 0.7 0.85 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2A VDS = 25V, f = 1 MHz, VGS = 0 Min. 7.5 S Ciss Input Capacitance 1050 pF Coss Output Capacitance 165 pF Crss Reverse Transfer Capacitance 25 pF STB8NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 250V, ID = 4A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 8A, VGS = 10V Typ. Max. Unit 19 ns 14 ns 36 45 nC 5 nC 18.2 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 400V, ID = 8A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 13 ns 15 ns 26 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (2) Forward On Voltage ISD = 8A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ISD = 8A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) Max. Unit 8 A 32 A 1.6 V 470 ns 3.2 µC 13.7 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STB8NC50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STB8NC50 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STB8NC50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB8NC50 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 7/9 1 STB8NC50 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 MAX. B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 8/9 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB8NC50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9