STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V DSS R DS( on) ID STD12N05L 50 V < 0.15 Ω 12 A STD12N06L 60 V < 0.15 Ω 12 A ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 3 2 1 IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit STD12N05L STD12N06L Drain-source Voltage (V GS = 0) 50 60 V Drain- gate Voltage (R GS = 20 kΩ) 50 60 V Gate-source Voltage o ± 15 V ID Drain Current (continuous) at T c = 25 C 12 A ID Drain Current (continuous) at T c = 100 oC 8 A Drain Current (pulsed) 48 A Total Dissipation at Tc = 25 C 45 W Derating Factor 0.3 W/o C ID M(•) P tot T stg Tj o Storage Temperature Max. Operating Junction Temperature -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area November 1996 1/10 STD12N05L/STD12N06L THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ o 3.33 100 1.5 275 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 12 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 30 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 7 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 8 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 for STD12N05L for STD12N06L I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 50 60 Unit V V T c = 125 oC V GS = ± 15 V 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS( on) Static Drain-source On Resistance V GS = 5 V ID = 6 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 1 1.6 2.5 V 0.115 0.15 Ω 12 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/10 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 6 A VG S = 0 Min. Typ. 4 8 350 150 50 Max. Unit S 500 200 80 pF pF pF STD12N05L/STD12N06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Conditions Min. Typ. Max. Unit 80 260 ns ns Turn-on Time Rise Time V DD = 25 V ID = 6 A VGS = 5 V R G = 50 Ω (see test circuit, figure 3) 55 180 Turn-on Current Slope V DD = 40 V ID = 12 A VGS = 5 V R G = 50 Ω (see test circuit, figure 5) 120 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V ID = 12 A V GS = 5 V A/µs 12 6 5 18 nC nC nC Typ. Max. Unit 40 60 110 60 90 160 ns ns ns Typ. Max. Unit 12 48 A A 1.5 V SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 40 V ID = 12 A R G = 50 Ω VGS = 5 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 12 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 12 A di/dt = 100 A/µs V DD = 25 V T j = 150 o C (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 75 ns 0.15 µC 4 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas Thermal Impedance 3/10 STD12N05L/STD12N06L Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STD12N05L/STD12N06L Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STD12N05L/STD12N06L Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/10 Fig. 2: Unclamped Inductive Waveforms STD12N05L/STD12N06L Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/10 STD12N05L/STD12N06L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 8/10 STD12N05L/STD12N06L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = = G 2 1 B2 = = = E = 3 B DETAIL ”A” L4 0068772-B 9/10 STD12N05L/STD12N06L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 10/10