STMICROELECTRONICS STD1NB80-1

STD1NB80-1
N - CHANNEL 800V - 16Ω - 1A - IPAK
PowerMESH MOSFET
PRELIMINARY DATA
TYPE
STD1NB80-1
■
■
■
■
■
V DSS
R DS(on)
ID
800 V
< 20 Ω
1A
TYPICAL RDS(on) = 16 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
2
1
IPAK
TO-251
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
■ AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Value
Unit
Drain-source Voltage (V GS = 0)
Parameter
800
V
Drain- gate Voltage (R GS = 20 kΩ)
800
V
± 30
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
ID
Drain Current (continuous) at T c = 100 o C
I DM (•)
P tot
dv/dt( 1 )
Tstg
Tj
Drain Current (pulsed)
o
1
A
0.63
A
4
A
Total Dissipation at T c = 25 C
50
W
Derating Factor
0.4
W/ o C
Peak Diode Recovery voltage slope
4.5
V/ns
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
September 1998
-65 to 150
o
C
150
o
C
( 1) ISD ≤ 1Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5
STD1NB80-1
THERMAL DATA
R thj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-Sink
Typ
Maximum Lead Temperature For Soldering Purpose
2.5
100
1.5
275
o
Max Value
Unit
1
A
90
mJ
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 50 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
800
V GS = 0
I DSS
Min.
Unit
V
T c = 125 o C
V GS = ± 30 V
1
50
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold
Voltage
V DS = V GS
I D = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
I D =0.5 A
I D(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Min.
Typ.
Max.
Unit
3
4
5
V
16
20
Ω
1
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 0.5 A
V GS = 0
Min.
Typ.
0.3
0.6
140
22
2.5
Max.
Unit
S
185
27
4
pF
pF
pF
STD1NB80-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Typ.
Max.
Unit
t d(on)
tr
Turn-on Time
Rise Time
Parameter
V DD = 400 V
R G = 4.7 Ω
Test Conditions
ID = 0.5A
VGS = 10 V
Min.
8
10
12
14
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 640 V
ID =1.1 A V GS = 10 V
10
5
4
14
nC
nC
nC
Typ.
Max.
Unit
40
15
50
56
21
70
ns
ns
ns
Typ.
Max.
Unit
1
4
A
A
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 640 V ID = 1.1 A
R G = 4.7 Ω V GS = 10 V
SOURCE DRAIN DIODE
Symbol
ISD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD = 1 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 1.1 A di/dt = 100 A/µs
V DD = 100 V
T j = 150 o C
V GS = 0
1.6
V
460
ns
1150
nC
5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STD1NB80-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
4/5
STD1NB80-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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