STMICROELECTRONICS STD30NE06

STD30NE06
®
N - CHANNEL 60V - 0.025 Ω - 30A - DPAK
STripFET " POWER MOSFET
PRELIMINARY DATA
TYPE
STD30NE06
■
■
■
■
■
■
V DSS
R DS(on)
ID
60 V
< 0.03 Ω
30 A
TYPICAL RDS(on) = 0.025 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100 oC
APPLICATION ORIENTED
CHARACTERIZATION
FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
3
1
DPAK
TO-252
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size "
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
60
V
Drain- gate Voltage (R GS = 20 kΩ)
60
V
± 20
V
30
A
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
ID
o
IDM (•)
P tot
Drain Current (continuous) at T c = 100 C
Drain Current (pulsed)
Total Dissipation at T c = 25 o C
Derating Factor
dv/dt
T stg
Tj
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
21
A
120
A
55
W
0.37
W/ o C
7
V/ns
-65 to 175
o
C
175
o
C
(1) ISD ≤20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5
STD30NE06
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
2.72
100
1.5
275
C/W
oC/W
o
C/W
o
C
Max Value
Unit
30
A
100
mJ
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , VDD = 25 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
60
VGS = 0
Unit
V
o
T c =125 C
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold
Voltage
V DS = VGS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
I D = 15 A
ID(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Min.
Typ.
Max.
Unit
2
3
4
V
0.025
0.030
Ω
30
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =15 A
V GS = 0
Min.
Typ.
15
25
2700
330
68
Max.
Unit
S
3500
450
90
pF
pF
pF
STD30NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 30 V
R G =4.7 Ω
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD =48V
Min.
I D = 22 A
V GS = 10 V
I D = 45 A
V GS = 10 V
Typ.
Max.
Unit
27
100
50
135
ns
ns
60
18
17
80
nC
nC
nC
Typ.
Max.
Unit
20
45
72
27
60
100
ns
ns
ns
Typ.
Max.
Unit
30
120
A
A
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 48 V
I D = 45 A
R G =4.7 Ω V GS = 10 V
SOURCE DRAIN DIODE
Symbol
I SD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Conditions
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 45 A
I SD = 45 A
V DD = 30 V
VGS = 0
di/dt = 100 A/µs
o
T j = 150 C
1.5
V
70
ns
210
µC
6
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STD30NE06
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL "A"
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL "A"
L4
0068772-B
4/5
STD30NE06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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.
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