STD3NC50 N - CHANNEL 500V - 2.4Ω - 3A TO-251/TO-252 PowerMESH ΙΙ MOSFET PRELIMINARY DATA TYPE ST D3NC50 ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 500 V < 2.7 Ω 3 A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL. DESCRIPTION The PowerMESH ΙΙ is the evolution of the first generation of MESH OVERLAY . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. 3 3 2 1 1 DPAK TO-252 (Suffix ”T4”) IPAK TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Value Un it Drain-source Voltage (V GS = 0) Parameter 500 V Drain- gate Voltage (R GS = 20 kΩ) 500 V G ate-source Voltage ± 30 V 3.2 A 2 A 12.8 A ID Drain Current (continuous) at Tc = 25 o C ID Drain Current (continuous) at Tc = 100 oC I DM (•) P tot Drain Current (pulsed) o T otal Dissipation at Tc = 25 C Derating Factor dv/dt( 1 ) Ts tg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area January 2000 60 W 0.48 W /o C 4 V/ns -65 to 150 o C 150 o C ( 1) ISD ≤3 A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/7 STD3NC50 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 2.0 100 1.5 275 C/W oC/W o C/W o C Max Valu e Unit AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 3 A E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) 40 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) T yp. Max. 500 V GS = 0 I DSS Min. Unit V T c = 125 oC V GS = ± 30 V 1 50 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source O n V GS = 10V Resistance I D(o n) V DS = V GS Min. T yp. Max. Unit 2 3 4 V 2.4 2.7 Ω ID = 1.5 A 3 On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/7 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D = 1.5 A V GS = 0 Min. T yp. Max. Unit 2 S 400 62 7.5 pF pF pF STD3NC50 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. T yp. Max. Unit t d(on) tr Turn-on Time Rise Time V DD = 300 V R G = 4.7 Ω ID = 1.5 A VGS = 10 V 11 8 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V I D = 3 A V GS = 10 V 15 6.5 5 21 nC nC nC T yp. Max. Unit SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions Min. 8 5 14 V DD = 400 V ID = 3 A R G = 4.7 Ω V GS = 10 V ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Con ditions Min. T yp. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 3 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V V GS = 0 Max. Unit 3 12 A A 1.6 V 245 ns 980 µC 8 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/7 STD3NC50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STD3NC50 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.094 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 0.023 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 5/7 STD3NC50 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 6/7 STD3NC50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7