STD5N20 N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252 POWER MOS TRANSISTOR TYPE STD5N20 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 200 V < 0.8 Ω 5 A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 150oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 3 2 1 IPAK TO-251 (Suffix ”-1”) APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ DC-DC CONVERTERS & DC-AC INVERTERS ■ TELECOMMUNICATION POWER SUPPLIES INDUSTRIAL MOTOR DRIVES 1 DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS Value Un it Drain-source Voltage (V GS = 0) Parameter 200 V Drain- gate Voltage (R GS = 20 kΩ) 200 V ± 20 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 5 A ID Drain Current (continuous) at Tc = 100 C 3.5 A Drain Current (pulsed) 20 A 45 W 0.36 W /o C I DM (•) P tot o o T otal Dissipation at Tc = 25 C Derating Factor T s tg Tj Storage T emperature Max. Operating Junction Temperature -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1999 1/10 STD5N20 THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature F or Soldering Purpose Max Max T yp o 2.77 100 1.5 275 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max,) E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value Unit 5 A 130 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 200 Unit V T c =125 o C V GS = ± 20 V 10 100 µA µA ± 100 nA Max. Unit ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance V GS = 10 V I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. 2 ID = 2.5 A Typ. 3 4 V 0.7 0.8 Ω 5 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/10 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 2.5 A V GS = 0 Min. Typ. 1.5 3 450 75 15 Max. Unit S 600 100 20 pF pF pF STD5N20 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 100 V I D = 2.5 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Test Con ditions 7 6 10 8 ns ns Turn-on Current Slope V DD = 160 V ID = 5 A V GS = 10 V R G = 47 Ω (see test circuit, figure 5) 400 Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 160 V 18 6 7 25 nC nC nC Typ. Max. Unit 7 5 15 10 7 20 ns ns ns Typ. Max. Unit 5 20 A A 1.5 V ID = 5 A Min. VGS = 10 V A/µs SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. V DD = 160 V I D = 5 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 5 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 180 ns 1125 nC 12.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/10 STD5N20 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STD5N20 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STD5N20 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit 6/10 Fig. 2: Unclamped Inductive Waveform STD5N20 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/10 STD5N20 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 8/10 STD5N20 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 9/10 STD5N20 Information furnished is believed to be accurate and reliable. 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