STD60NF06 N-CHANNEL 60V - 0.014Ω - 60A DPAK STripFET™ II POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STD60NF06 60 V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 DPAK (Suffix “T4”) DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ■ AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V ± 20 V Gate- source Voltage ID Drain Current (continuous) at TC = 25°C 60 A ID Drain Current (continuous) at TC = 100°C 42 A Drain Current (pulsed) 240 A Total Dissipation at TC = 25°C 110 W Derating Factor 0.73 W/°C 4 V/ns – 55 to 175 °C IDM (l) PTOT dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature (●) Pulse width limited by safe operating area October 2002 (1) I SD≤ 60A, di/dt≤200 A/µs, VDD≤ 24V, Tj≤TjMAX 1/9 STD60NF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Tl Max 1.36 °C/W Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 30 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) 350 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V V(BR)DSS Min. Typ. Max. 60 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA Max. Unit 4 V 0.014 0.016 Ω Typ. Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 30 A Min. Typ. 2 DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Min. Forward Transconductance VDS =15 V , ID = 30 A 20 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1810 pF Coss Output Capacitance 360 pF Crss Reverse Transfer Capacitance 125 pF STD60NF06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Test Conditions Min. VDD = 30 V, ID = 30 A RG = 4.7Ω , VGS = 10 V (see test circuit, Figure 3) VDD = 48 V, ID =60 A VGS = 10 V Typ. Max. Unit 16 ns 108 ns Qg Total Gate Charge 49 66 nC Qgs Gate-Source Charge 18 nC Qgd Gate-Drain Charge 14 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 30 V, ID = 30 A, RG = 4.7Ω, VGS = 10 V (see test circuit, Figure 3) 43 20 ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp =48 V, ID = 60 A RG = 4.7Ω, VGS = 10 V (see test circuit, Figure 3) 40 12 21 ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 60 A ISDM (2) Source-drain Current (pulsed) 240 A VSD (1) Forward On Voltage ISD = 60 A, VGS = 0 1.3 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM 73 182 5 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/9 STD60NF06 Safe Operating Area for DPAK Thermal Impedence for DPAK Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STD60NF06 Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD60NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD60NF06 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 7/9 STD60NF06 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. MAX. D 1.5 D1 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 0.059 0.063 0.059 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 * on sales type 8/9 inch 0.641 MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD60NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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