STMICROELECTRONICS STD9N10L

STD9N10L
N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK
POWER MOS TRANSISTOR
TYPE
V DSS
R DS(on)
ID
STD9N10L
100 V
< 0.27 Ω
9A
■
■
■
■
■
■
■
■
■
TYPICAL RDS(on) = 0.22 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATURE
HIGH dV/dt RUGGEDNESS
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
3
3
2
1
IPAK
TO-251
(Suffix "-1")
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ POWER MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCRONOUS RECTIFICATION
1
DPAK
TO-252
(Suffix "T4")
■
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
V DGR
V GS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
± 20
V
9
A
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
ID
o
IDM (•)
P tot
dV/dt( 1 )
T stg
Tj
Drain Current (continuous) at T c = 100 C
6.4
A
Drain Current (pulsed)
36
A
Total Dissipation at T c = 25 o C
45
W
Derating Factor
0.3
W/ o C
7
V/ns
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
-65 to 175
o
C
175
o
C
(•) Pulse width limited by safe operating area
April 2000
1/6
STD9N10L
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
o
3.33
100
1.5
275
Max
Max
Typ
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 25 V)
Max Value
Unit
9
A
25
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
V GS = 0
I DSS
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
IGSS
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
100
Unit
V
T c = 125 o C
V GS = ± 15 V
10
100
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
I D(on)
I D = 250 µA
V GS = 5V I D = 4.5 A
V GS = 10V I D = 4.5 A
Min.
1
T c = 100 o C
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 5 V
Typ.
1.7
2.5
V
0.22
0.21
0.27
0.25
Ω
Ω
9
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/6
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 4.5 A
V GS = 0
Min.
Typ.
4
7
520
90
30
Max.
Unit
S
700
120
40
pF
pF
pF
®
STD9N10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 50 V
R G = 4.7 Ω
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 80 V
Min.
I D = 4.5 A
V GS = 5 V
ID = 9 A
VGS = 10 V
Typ.
Max.
Unit
10
25
14
35
ns
ns
13
5.5
6
18
nC
nC
nC
Typ.
Max.
Unit
10
10
25
14
14
35
ns
ns
ns
Typ.
Max.
Unit
9
36
A
A
1.5
V
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 80 V
R G = 4.7 Ω
Min.
ID = 9 A
V GS = 5 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 9 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 9 A
V DD = 25 V
t rr
Q rr
I RRM
Min.
V GS = 0
di/dt = 100 A/µs
T j = 150 o C
110
ns
0.4
µC
7.2
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
®
3/6
STD9N10L
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL "A"
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL "A"
L4
0068772-B
4/6
®
STD9N10L
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
®
5/6
STD9N10L
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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®