STMICROELECTRONICS STE15NA100

STE15NA100
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STE15NA100
■
■
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
1000 V
< 0.77 Ω
15 A
TYPICAL RDS(on) = 0.65 Ω
HIGH CURRENT POWER MODULE
AVALANCHE RUGGED TECHNOLOGY
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
EASY TO MOUNT
SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
EXTREMELY LOW Rth (Junction to case)
VERY LOW INTERNAL PARASITIC
INDUCTANCE
ISOLATED PACKAGE UL RECOGNIZED
ISOTOP
APPLICATIONS
SMPS & UPS
■ MOTOR CONTROL
■ WELDING EQUIPMENT
■ OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
1000
V
Drain- gate Voltage (R GS = 20 kΩ)
1000
V
Gate-source Voltage
± 30
V
o
ID
Drain Current (continuous) at T c = 25 C
15
A
ID
o
9.5
A
I DM (•)
Ptot
T stg
Tj
V ISO
Drain Current (continuous) at T c = 100 C
Drain Current (pulsed)
60
A
Total Dissipation at T c = 25 o C
300
W
Derating Factor
2.4
W/ o C
Storage Temperature
Max. Operating Junction Temperature
Insulation Withhstand Voltage (AC-RMS)
-55 to 150
o
C
150
o
C
2500
V
(•) Pulse width limited by safe operating area
February 1998
1/5
STE15NA100
THERMAL DATA
R thj-case
R thc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.27
o
C/W
Max
0.05
o
C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
TBD
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , VDD = 50 V)
TBD
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 500 µA
Min.
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS =0.8x Max Rating
I GSS
Gate-body Leakage
Current (V DS = 0)
Max.
1000
VGS = 0
I DSS
Typ.
Unit
V
T c = 125 o C
V GS = ± 30 V
250
1000
µA
µA
± 200
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold
Voltage
V DS = VGS
ID = 1mA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
I D = 7.5 A
ID(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Min.
Typ.
Max.
Unit
2.25
3
3.75
V
0.65
0.77
Ω
15
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1.0 MHz
Min.
I D = 7.5 A
V GS = 0
Typ.
Max.
12
Unit
S
7
600
150
9.1
780
195
nF
pF
pF
STE15NA100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 500 V
R G = 4.7 Ω
I D = 7.5 A
V GS = 10 V
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 800 V
I D = 15 A V GS = 10 V
Min.
Typ.
Max.
Unit
40
55
56
77
ns
ns
470
43
226
660
nC
nC
nC
Typ.
Max.
Unit
110
25
150
154
36
210
ns
ns
ns
Typ.
Max.
Unit
15
60
A
A
1.6
V
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 800 V
R G = 4.7 Ω
Min.
I D = 15 A
V GS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 15 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 15 A di/dt = 100 A/µs
o
V R = 100 V
T j = 150 C
t rr
Q rr
I RRM
Min.
V GS = 0
1400
ns
42
µC
60
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STE15NA100
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
O
7.8
0.157
0.157
8.2
0.307
0.322
A
G
B
O
H
J
K
L
M
4/5
C
F
E
D
N
STE15NA100
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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