VISHAY VS-MUR1520-N3

VS-MUR1520PbF, VS-MUR1520-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 15 A FRED Pt®
FEATURES
• Ultrafast recovery time
Base
cathode
2
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
1
Cathode
TO-220AC
• Compliant to RoHS Directive 2002/95/EC
3
Anode
• Designed
and
qualified
according
to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION/APPLICATIONS
PRODUCT SUMMARY
Package
VS-MUR1520PbF is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
TO-220AC
IF(AV)
15 A
VR
200 V
VF at IF
1.05 V
trr typ.
See Recovery table
TJ max.
175 °C
Diode variation
Single die
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
IFSM
Peak repetitive forward current
IFM
Operating junction and storage temperatures
TEST CONDITIONS
Total device, rated VR, TC = 150 °C
MAX.
UNITS
200
V
15
A
200
Rated VR, square wave, 20 kHz, TC = 150 °C
30
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 15 A
-
-
1.05
IF = 15 A, TJ = 150 °C
-
-
0.85
VR = VR rated
-
-
10
TJ = 150 °C, VR = VR rated
-
-
500
IR = 100 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 200 V
-
55
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
Revision: 11-Aug-11
μA
Document Number: 94077
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-MUR1520PbF, VS-MUR1520-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
SYMBOL
trr
IRRM
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
-
35
TJ = 25 °C
-
22
-
TJ = 125 °C
-
39
-
-
1.6
-
-
4.1
-
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 160 V
UNITS
ns
A
TJ = 25 °C
-
19
-
TJ = 125 °C
-
90
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case
RthJC
-
-
1.5
Thermal resistance,
junction to ambient
RthJA
-
-
50
Thermal resistance,
case to heatsink
RthCS
-
0.5
-
-
2.0
-
g
-
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Reverse recovery charge
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Revision: 11-Aug-11
Case style TO-220AC
°C/W
MUR1520
Document Number: 94077
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR1520PbF, VS-MUR1520-N3
www.vishay.com
Vishay Semiconductors
1000
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
1
TJ = 175 °C
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
100
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
0.1
0.1
TJ = 25 °C
0.01
0
0.3
0.6
0.9
0
1.5
1.2
50
100
150
200
250
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
10
100
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
0.001
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
.
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 11-Aug-11
Document Number: 94077
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR1520PbF, VS-MUR1520-N3
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Vishay Semiconductors
60
DC
160
Square wave (D = 0.50)
Rated VR applied
150
IF = 30 A
IF = 15 A
IF = 8 A
40
30
20
140
See note (1)
10
100
130
0
5
10
15
20
25
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
25
200
20
RMS limit
15
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
10
5
DC
5
10
15
20
160
VR = 160 V
TJ = 125 °C
TJ = 25 °C
120
IF = 30 A
IF = 15 A
IF = 8 A
80
40
0
0
Qrr (nC)
Average Power Loss (W)
VR = 160 V
TJ = 125 °C
TJ = 25 °C
50
170
trr (ns)
Allowable Case Temperature (°C)
180
25
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(1)
Revision: 11-Aug-11
Document Number: 94077
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR1520PbF, VS-MUR1520-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 11-Aug-11
Document Number: 94077
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR1520PbF, VS-MUR1520-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MUR
1
2
15
20
PbF
3
4
5
1
-
Vishay Semiconductors product
2
-
Ultrafast MUR series
3
-
Current rating (15 = 15 A)
4
-
Voltage rating (20 = 200 V)
5
-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-MUR1520PbF
50
1000
Antistatic plastic tube
VS-MUR1520-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
Revision: 11-Aug-11
www.vishay.com/doc?95221
TO-220ACPbF
www.vishay.com/doc?95224
TO-220AC-N3
www.vishay.com/doc?95068
www.vishay.com/doc?95271
Document Number: 94077
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
Q
3
D
D
L1
E
A1
C
Thermal pad
C
H1
D2
Detail B
(6)
2 x b2
2xb
Detail B
θ
D1
1
2
A
(6)
H1
(7)
(6) D
1
2 3
Lead tip
L3
C
E1
(6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
L4
L
c
e1
A
Conforms to JEDEC outline TO-220AC
View A - A
A2
0.015 M B A M
SYMBOL
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
E1
A1
1.14
1.40
0.045
0.055
A2
2.56
2.92
0.101
0.115
b
0.69
1.01
0.027
0.040
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
MILLIMETERS
INCHES
MAX.
MIN.
MAX.
6.86
8.89
0.270
0.350
6
E2
-
0.76
-
0.030
7
e
2.41
2.67
0.095
0.105
e1
4.88
5.28
0.192
0.208
4
H1
6.09
6.48
0.240
0.255
L
13.52
14.02
0.532
0.552
4
L1
3.32
3.82
0.131
0.150
c
0.36
0.61
0.014
0.024
L3
1.78
2.13
0.070
0.084
c1
0.36
0.56
0.014
0.022
4
L4
0.76
1.27
0.030
0.050
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
NOTES
MIN.

90° to 93°
6, 7
2
2
90° to 93°
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
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[email protected], [email protected], [email protected]
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
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Document Number: 91000