STGB10NB40LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB10NB40LZ CLAMPED < 1.8 V 20 A ■ ■ ■ ■ ■ ■ POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 D2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ AUTOMOTIVE IGNITION ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGB10NB40LZT4 GB10NB40LZ D2PAK TAPE & REEL August 2003 1/10 STGB10NB40LZ ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCES Collector-Emitter Voltage (VGS = 0) VECR Emitter-Collector Voltage VGE Gate-Emitter Voltage Value Unit CLAMPED V 18 V CLAMPED V IC Collector Current (continuos) at TC = 25°C 20 A IC Collector Current (continuos) at TC = 100°C 10 A Collector Current (pulsed) 40 A Eas Single Pulse Energy Tc = 25°C 300 mJ PTOT Total Dissipation at TC = 25°C ICM () 150 W Derating Factor 1 W/°C ESD ESD (Human Body Model) 4 KV Tstg Storage Temperature – 55 to 175 °C Tj Operating Junction Temperature ()Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 1 °C/W 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Min. Typ. Max. Unit BV(CES) Clamped Voltage Parameter IC = 2 mA, VGE = 0, Tj= - 40°C to 150°C 380 410 440 V BV(ECR) Emitter Collector Break-down Voltage IC = 75 mA, Tj= 25°C 18 BVGE Gate Emitter Break-down Voltage IG = ± 2 mA 12 ICES Collector cut-off Current (VGE = 0) IGES Gate-Emitter Leakage Current (VCE = 0) RGE Gate Emitter Resistance Test Conditions V 16 V VCE = 15 V, VGE= 0 ,Tj= 150 °C 10 µA VCE= 200 V, VGE= 0 ,Tj= 150°C 100 µA ± 700 µA VGE = ± 10V , VCE = 0 20 KΩ ON (1) Symbol VGE(th) VCE(SAT) 2/10 Parameter Test Conditions Min. Typ. Gate Threshold Voltage VCE = VGE, IC = 250 µA, TC= - 40°C to 150°C 0.6 Collector-Emitter Saturation Voltage VGE =4.5V, IC = 10 A, Tj= 25°C 1.2 VGE =4.5V, IC = 20 A, Tj= 25°C 1.3 Max. Unit 2.2 V 1.8 V V STGB10NB40LZ ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Parameter Forward Transconductance Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Gate Charge Test Conditions Min. VCE = 15 V , IC= 10 A VCE = 25V, f = 1 MHz, VGE = 0 VCE = 328V, IC = 10 A, VGE = 5V Typ. Max. Unit 18 S 1300 pF 105 pF 12 pF 28 nC FUNCTIONAL CHARACTERISTICS Symbol II U.I.S. Parameter Test Conditions Latching Current VClamp = 328 V, TC = 125 °C RGOFF = 1KΩ , VGE = 5 V Functional Test Open Secondary Coil RGOFF = 1KΩ , L = 1 mH , Tc= 125°C Min. Typ. Max. 40 Unit A 13 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit VCC = 328 V, IC = 10 A RG = 1KΩ , VGE = 5 V 1300 ns 270 ns Turn-on Current Slope VCC= 328 V, IC = 10 A RG=1KΩ, VGE = 5 V 60 A/µs Turn-on Switching Losses VCC= 328 V, IC = 10 A, TC= 25 °C RG = 1KΩ, VGE = 5 V, TC= 125 °C 2.4 2.6 mJ mJ Turn-on Delay Time Rise Time SWITCHING OFF Symbol tc Parameter Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Delay Time tf Eoff(**) tc Test Conditions Vcc = 328 V, IC = 10 A, RGE = 1K Ω , VGE = 5 V Fall Time Turn-off Switching Loss Cross-over Time Vcc = 328 V, IC = 10 A, RGE = 1KΩ , VGE = 5 V Tj = 125 °C Min. Typ. Max. Unit 3.6 µs 2 µs 8 µs 1.4 µs 5 mJ 5.7 µs 2.7 µs µs tr(Voff) Off Voltage Rise Time td(off) Delay Time 9.2 Fall Time 2.8 µs Turn-off Switching Loss 8.7 mJ tf Eoff(**) (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail 3/10 STGB10NB40LZ Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current 4/10 STGB10NB40LZ Gate Threshold vs Temperature Capacitance Variations Total Switching Losses vs Gate Resistance Normalized Clamping Voltage vs Temperature Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Temperature 5/10 STGB10NB40LZ Total Switching Losses vs Collector Current Turn-Off SOA 6/10 Thermal Impedance STGB10NB40LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit 7/10 STGB10NB40LZ D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 8/10 1 STGB10NB40LZ 2 D PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.075 0.082 0.933 0.956 * on sales type 9/10 STGB10NB40LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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