STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ STGB20NB32LZ-1 CLAMPED CLAMPED < 2.0 V < 2.0 V 20 A 20 A ■ ■ ■ ■ ■ ■ POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 3 12 1 D 2PAK I2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ AUTOMOTIVE IGNITION ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCES Collector-Emitter Voltage (VGS = 0) VECR Reverse Battery Protection VGE Gate-Emitter Voltage Value Unit CLAMPED V 20 V CLAMPED V IC Collector Current (continuous) at Tc = 25°C 40 A IC Collector Current (continuous) at Tc = 100°C 30 A ICM () Collector Current (pulsed) 80 A Eas Single Pulse Energy Tc = 25°C 700 mJ Ptot Total Dissipation at Tc = 25°C 150 W 1 W/°C Derating Factor ESD ESD (Human Body Model) Tstg Storage Temperature Tj Max. Operating Junction Temperature 4 KV –65 to 175 °C 175 °C (•)Pulse width limited by safe operating area December 2002 1/11 STGB20NB32LZ - STGB20NB32LZ-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.2 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Min. Typ. Max. Unit IC = 2 mA, VGE = 0, Tc= - 40°C 330 355 380 V IC = 2 mA, VGE = 0, Tc= 25°C 325 350 375 V IC = 2 mA, VGE = 0, Tc= 150°C 320 345 370 V Emitter Collector Break-down Voltage IC = 75 mA, Tc = 25°C 20 28 BVGE Gate Emitter Break-down Voltage IG = ± 2 mA 12 14 ICES Collector cut-off Current (VGE = 0) BV(CES) BV(ECR) Parameter Clamped Voltage IGES Gate-Emitter Leakage Current (VCE = 0) RGE Gate Emitter Resistance Test Conditions V 16 V VCE = 15 V, VGE =0 ,TC =150 °C 10 µA VCE =200 V, VGE=0 ,TC =150°C 100 µA VGE = ± 10V , VCE = 0 ± 400 ± 660 ± 1000 10 15 25 KΩ Test Conditions Min. Typ. Max. Unit VCE = VGE, IC = 250µA, Tc=-40°C 1.2 µA ON (1) Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage VCE = VGE, IC = 250µA, Tc= 25°C 1 VCE =VGE, IC = 250µA, Tc=150°C 0.6 V 1.4 2 V V VGE =4.5V, IC = 10 A, Tc= 25°C 1.1 1.8 V VGE =4.5V, IC = 10 A, Tc= 150°C 1 1.7 V VGE =4.5V, IC = 20 A, Tc= 25°C 1.35 2 V VGE =4.5V, IC = 20 A, Tc= 150°C 1.25 2 V Typ. Max. Unit DYNAMIC Symbol gfs Forward Transconductance Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg 2/11 Parameter Gate Charge Test Conditions VCE = 25 V , IC =20 A VCE = 25 V, f = 1 MHz, VGE = 0 VCE = 280 V, IC = 20 A, VGE = 5 V Min. 35 S 2300 pF 165 pF 28 pF 51 nC STGB20NB32LZ - STGB20NB32LZ-1 FUNCTIONAL CHARACTERISTICS Symbol II U.I.S. Parameter Test Conditions Min. Typ. Max. 80 Unit A Latching Current VClamp = 250 V, TC = 150 °C RGOFF = 1KΩ , VGE = 4.5 V Functional Test Open Secondary Coil RGOFF = 1KΩ , L = 3 mH ,Tc=25°C RGOFF =1KΩ , L = 3mH ,Tc=150°C 21.6 15 26 18 Test Conditions Min. Typ. A A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Max. Unit Delay Time Rise Time VCC = 250 V, IC = 20 A RG = 1KΩ , VGE = 4.5 V 2.3 0.6 µs µs Turn-on Current Slope VCC= 250 V, IC = 20 A RG=1KΩ, VGE = 4.5 V 550 A/µs Turn-on Switching Losses VCC= 250 V, IC = 20 A, Tc=25°C RG=1KΩ, VGE = 4.5 V, Tc=150°C 8.8 9.2 mJ mJ SWITCHING OFF Symbol tc tr(Voff) tf Parameter Cross-Over Time Off Voltage Rise Time Test Conditions Vcc = 250 V, IC = 20 A, RGE = 1 KΩ , VGE = 4.5 V Typ. Max. Unit 4.8 µs 2.6 µs 2 µs td(off) Off Voltage Delay Time 11.5 µs Eoff(**) Turn-off Switching Loss 11.8 mJ 7.8 µs 3.5 µs tc tr(Voff) tf Fall Time Min. Cross-Over Time Off Voltage Rise Time Vcc = 250 V, IC = 20 A, RGE = 1 KΩ , VGE = 4.5 V Tc = 150 °C Fall Time 3.9 µs td(off) Off Voltage Delay Time 12 µs Eoff(**) Turn-off Switching Loss 17.8 mJ (**)Losses Include Also the Tail (jedec Standardization) Thermal Impedance 3/11 STGB20NB32LZ - STGB20NB32LZ-1 Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance Collector-Emitter On Voltage vs Temperature Capacitance Variations 4/11 STGB20NB32LZ - STGB20NB32LZ-1 Gate Charge vs Gate-Emitter Voltage Normalized BreakDown Voltage vs Temperature Break-Down Voltage vs Emitter Resistance BVGEO (Zener Gate-Emitter) vs Temperature Self Clamped Inductive Switching Energy vs Open Secondary Coil dV/dt Gate-Emitter Resistance 5/11 STGB20NB32LZ - STGB20NB32LZ-1 BVEC Reverse Battery Voltage 6/11 STGB20NB32LZ - STGB20NB32LZ-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit 7/11 STGB20NB32LZ - STGB20NB32LZ-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 8/11 1 STGB20NB32LZ - STGB20NB32LZ-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 9/11 STGB20NB32LZ - STGB20NB32LZ-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. inch MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 10/11 0.933 0.956 inch MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STGB20NB32LZ - STGB20NB32LZ-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 11/11