STMICROELECTRONICS STGD3NB60SD

STGD3NB60SD
®
N-CHANNEL 3A - 600V DPAK
Power MESH IGBT
PRELIMINARY DATA
TYPE
VCES
V CE(sat)
IC
STGD3NB60SD
600 V
< 1.5 V
3A
■
■
■
■
■
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (Vcesat)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
INTEGRATED FREEWHEELING DIODE
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
3
1
DPAK
TO-252
(Suffix "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
GAS DISCHARGE LAMP
■ STATIC RELAYS
■ MOTOR CONTROL
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CES
Collector-Emitter Voltage (V GS = 0)
V GE
Gate-Emitter Voltage
o
IC
Collector Current (continuous) at T c = 25 C
IC
o
ICM (•)
P tot
Collector Current (continuous) at T c = 100 C
Tj
Unit
600
V
± 20
V
6
A
3
A
Collector Current (pulsed)
25
A
Total Dissipation at T c = 25 o C
48
W
0.32
W/ o C
Derating Factor
T stg
Value
Storage Temperature
Max. Operating Junction Temperature
-65 to 175
o
C
175
o
C
(•) Pulse width limited by safe operating area
March 2000
1/8
STGD3NB60SD
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
o
3.125
100
1.5
Max
Max
Typ
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Collector-Emitter
Breakdown Voltage
I C = 250 µA
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = Max Rating
IGES
Gate-Emitter Leakage
Current (V CE = 0)
V GE = ± 20 V
V BR(CES)
V GE = 0
Min.
Typ.
Max.
600
Unit
V
10
100
µA
µA
± 100
nA
Max.
Unit
5
V
1
1.2
1.1
1.5
V
V
V
Min.
Typ.
Max.
Unit
1.7
2.5
T j = 25 o C
T j = 125 o C
V CE = 0
ON (∗)
Symbol
V GE(th)
V CE(SAT)
Parameter
Test Conditions
I C = 250 µA
Gate Threshold
Voltage
V CE = V GE
Collector-Emitter
Saturation Voltage
V GE = 15 V
V GE = 15 V
V GE = 15 V
Min.
Typ.
2.5
I C = 1.5 A
IC = 3 A
IC = 3 A
T j = 125 o C
DYNAMIC
Symbol
gf s
Parameter
Test Conditions
Forward
Transconductance
V CE =25 V
IC = 3 A
C ies
C oes
C res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
f = 1 MHz
QG
Q GE
Q GC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V CE = 480 V
Latching Current
V clamp = 480 V
T j = 150 o C
I CL
IC = 3 A
V GE = 0
255
30
5.6
V GE = 15 V
18
5.4
5.5
R G =1kΩ
S
330
40
7
pF
pF
pF
nC
nC
nC
12
A
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
E on
2/8
Parameter
Test Conditions
Delay Time
Rise Time
V CC = 480 V
V GE = 15 V
IC = 3 A
R G = 1kΩ
Turn-on Current Slope
V CC = 480 V
R G = 1kΩ
T j = 125 o C
IC = 3 A
V GE = 15 V
Turn-on Switching
Losses
Min.
Typ.
Max.
Unit
125
150
ns
ns
50
A/µs
1100
µJ
STGD3NB60SD
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
tc
t r (v off )
td (of f )
tf
E off (**)
V CC = 480 V
Cross-Over Time
Off Voltage Rise Time R GE = 1 kΩ
Delay Time
Fall Time
Turn-off Switching Loss
tc
t r (v off )
td (of f )
tf
E off (**)
V CC = 480 V
Cross-Over Time
Off Voltage Rise Time R GE = 1kΩ
Delay Time
T j = 125 o C
Fall Time
Turn-off Switching Loss
Min.
IC = 3 A
V GE = 15 V
IC = 3 A
V GE = 15 V
Typ.
Max.
Unit
1.8
1.0
3.4
0.72
1.15
µs
µs
µs
µs
mJ
2.8
1.45
3.6
1.2
1.8
µs
µs
µs
µs
mJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
If
I fm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
If = 3 A
If = 1 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A
dI/dt = 100 A/µS
t rr
Q rr
I rrm
Min.
Typ.
1.55
1.15
V R =200 V
T j = 125 o C
1700
4500
9.5
Max.
Unit
3
25
A
A
1.9
V
V
ns
nC
A
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGD3NB60SD
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGD3NB60SD
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Off Switching Losses vs Ic
Off Switching Losses vs Tj
Switching Off Safe Operatin Area
5/8
STGD3NB60SD
Diode Forward vs Tj
Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
6/8
STGD3NB60SD
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL "A"
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL "A"
L4
0068772-B
7/8
STGD3NB60SD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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.